ZnO thin films produced by filtered cathodic vacuum arc technique

K. Y. Tse; H. H. Hng; Shu Ping Lau; Y. G. Wang; Siu Fung Yu

doi:10.1016/j.ceramint.2003.12.156

ZnO thin films produced by filtered cathodic vacuum arc technique

K. Y. Tse, H. H. Hng, Shu Ping Lau, Y. G. Wang, Siu Fung Yu

Research output: Journal article publication › Conference article › Academic research › peer-review

20 Citations (Scopus)

Abstract

High quality c-axis oriented ZnO thin films have been successfully deposited on silicon substrates using filtered cathodic vacuum arc (FCVA) technique. Two deposition temperatures, namely room temperature and 420°C, were studied. The films were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). XRD revealed that the ZnO films exhibited (002) orientation. An amorphous layer between the substrate and the ZnO film was observed in both samples using TEM. Both samples showed c-axis oriented ZnO columns. However, for the ZnO thin film deposited at room temperature, the c-axis oriented ZnO columns were observed to grow on a layer of randomly oriented nanocrystals.

Original language	English
Pages (from-to)	1669-1674
Number of pages	6
Journal	Ceramics International
Volume	30
Issue number	7
DOIs	https://doi.org/10.1016/j.ceramint.2003.12.156
Publication status	Published - 7 Sept 2004
Externally published	Yes
Event	3rd Asian Meeting on Electroceramics - Singapore, Singapore Duration: 7 Dec 2003 → 11 Dec 2003

Keywords

A. Films
B. Electron microscopy
D. ZnO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.ceramint.2003.12.156

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title = "ZnO thin films produced by filtered cathodic vacuum arc technique",

abstract = "High quality c-axis oriented ZnO thin films have been successfully deposited on silicon substrates using filtered cathodic vacuum arc (FCVA) technique. Two deposition temperatures, namely room temperature and 420°C, were studied. The films were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). XRD revealed that the ZnO films exhibited (002) orientation. An amorphous layer between the substrate and the ZnO film was observed in both samples using TEM. Both samples showed c-axis oriented ZnO columns. However, for the ZnO thin film deposited at room temperature, the c-axis oriented ZnO columns were observed to grow on a layer of randomly oriented nanocrystals.",

keywords = "A. Films, B. Electron microscopy, D. ZnO",

author = "Tse, {K. Y.} and Hng, {H. H.} and Lau, {Shu Ping} and Wang, {Y. G.} and Yu, {Siu Fung}",

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AU - Tse, K. Y.

AU - Hng, H. H.

AU - Lau, Shu Ping

AU - Wang, Y. G.

AU - Yu, Siu Fung

PY - 2004/9/7

Y1 - 2004/9/7

N2 - High quality c-axis oriented ZnO thin films have been successfully deposited on silicon substrates using filtered cathodic vacuum arc (FCVA) technique. Two deposition temperatures, namely room temperature and 420°C, were studied. The films were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). XRD revealed that the ZnO films exhibited (002) orientation. An amorphous layer between the substrate and the ZnO film was observed in both samples using TEM. Both samples showed c-axis oriented ZnO columns. However, for the ZnO thin film deposited at room temperature, the c-axis oriented ZnO columns were observed to grow on a layer of randomly oriented nanocrystals.

AB - High quality c-axis oriented ZnO thin films have been successfully deposited on silicon substrates using filtered cathodic vacuum arc (FCVA) technique. Two deposition temperatures, namely room temperature and 420°C, were studied. The films were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). XRD revealed that the ZnO films exhibited (002) orientation. An amorphous layer between the substrate and the ZnO film was observed in both samples using TEM. Both samples showed c-axis oriented ZnO columns. However, for the ZnO thin film deposited at room temperature, the c-axis oriented ZnO columns were observed to grow on a layer of randomly oriented nanocrystals.

KW - A. Films

KW - B. Electron microscopy

KW - D. ZnO

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DO - 10.1016/j.ceramint.2003.12.156

M3 - Conference article

SN - 0272-8842

VL - 30

SP - 1669

EP - 1674

JO - Ceramics International

JF - Ceramics International

IS - 7

T2 - 3rd Asian Meeting on Electroceramics

Y2 - 7 December 2003 through 11 December 2003

ER -

ZnO thin films produced by filtered cathodic vacuum arc technique

Abstract

Keywords

ASJC Scopus subject areas

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