Abstract
An array of highly disordered i-ZnO:Al(3%) random cavities, which have 1 μm width, 150 nm thickness, and 2 mm length, is sandwiched between n-ZnO:Al(5%) and p-GaN /sapphire substrate to form an array of heterojunctions. The random cavities, which are electrically isolated and optically coupled with the adjacent random cavities, are laterally separated by a 1 μm wide Al2O3dielectric insulator. Stable single-mode operation is observed from the laser diode array under high electrical pumping (i.e., >6×threshold current) at room temperature.
Original language | English |
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Article number | 241107 |
Journal | Applied Physics Letters |
Volume | 97 |
Issue number | 24 |
DOIs | |
Publication status | Published - 13 Dec 2010 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)