Zn-interstitial-enhanced ferromagnetism in Cu-doped ZnO films

T. S. Herng, Shu Ping Lau, Siu Fung Yu, J. S. Chen, K. S. Teng

Research output: Journal article publicationJournal articleAcademic researchpeer-review

72 Citations (Scopus)

Abstract

Copper-doped ZnO (ZnO:Cu) films exhibiting room-temperature (RT) ferromagnetism were prepared by filtered cathodic vacuum arc (FCVA) technique. The ZnO:Cu films deposited at RT showed the strongest magnetic moment of 0.40 μB/Cu as compared with the samples prepared at elevated temperatures. The observed strong ferromagnetism in the RT-deposited ZnO:Cu films could be partly associated with Zn-interstitial defects. The degradation of magnetic moment in the ZnO:Cu prepared at high temperatures and annealed at elevated temperatures might be attributed to the out-diffusion of Zn interstitials to the ZnO lattice.
Original languageEnglish
Pages (from-to)107-110
Number of pages4
JournalJournal of Magnetism and Magnetic Materials
Volume315
Issue number2
DOIs
Publication statusPublished - 1 Aug 2007
Externally publishedYes

Keywords

  • Copper-doped zinc oxide
  • Defect
  • Diluted magnetic semiconductor
  • Ferromagnetism

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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