Abstract
Copper-doped ZnO (ZnO:Cu) films exhibiting room-temperature (RT) ferromagnetism were prepared by filtered cathodic vacuum arc (FCVA) technique. The ZnO:Cu films deposited at RT showed the strongest magnetic moment of 0.40 μB/Cu as compared with the samples prepared at elevated temperatures. The observed strong ferromagnetism in the RT-deposited ZnO:Cu films could be partly associated with Zn-interstitial defects. The degradation of magnetic moment in the ZnO:Cu prepared at high temperatures and annealed at elevated temperatures might be attributed to the out-diffusion of Zn interstitials to the ZnO lattice.
Original language | English |
---|---|
Pages (from-to) | 107-110 |
Number of pages | 4 |
Journal | Journal of Magnetism and Magnetic Materials |
Volume | 315 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1 Aug 2007 |
Externally published | Yes |
Keywords
- Copper-doped zinc oxide
- Defect
- Diluted magnetic semiconductor
- Ferromagnetism
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics