Yield-Limiting Defect Analysis in 0.15 μm Process Development

Z. G. Song; G. Qian; Jiyan Dai; S. Ansari; C. K. Oh; S. Redkar

Yield-Limiting Defect Analysis in 0.15 μm Process Development

Z. G. Song
, G. Qian
, Jiyan Dai
, S. Ansari
, C. K. Oh
, S. Redkar

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

Process development usually has an indispensable period of yield-learning. The length of the period is highly dependent on identification of the root causes of yield-limiting defects and thus failure analysis plays an important role in the yield improvement process. This paper presents the failure analysis of yield-limiting defects in 0.15 (am process development. The failure analysis involves failure mode categorization by MOSAID tester, defective contact identification by contact-level Passive Voltage Contrast (PVC) technique and subsequent Focus Ion Beam (FIB) cross-section followed by Transmission Electron Microscopy (TEM) analysis. Finally, the root causes for the yield-limiting defects were identified.

Original language	English
Title of host publication	Conference Proceedings from the International Symposium for Testing and Failure Analysis
Pages	431-435
Number of pages	5
Publication status	Published - 1 Dec 2001
Externally published	Yes
Event	Proceedings of the 27th International Symposium for Testing and Failure Analysis - Santa Clara, CA, United States Duration: 11 Nov 2001 → 15 Nov 2001

Conference

Conference	Proceedings of the 27th International Symposium for Testing and Failure Analysis
Country/Territory	United States
City	Santa Clara, CA
Period	11/11/01 → 15/11/01

ASJC Scopus subject areas

Control and Systems Engineering
Safety, Risk, Reliability and Quality
Electrical and Electronic Engineering

Cite this

@inproceedings{bcbf7152afea493281860b2f155a31ea,

title = "Yield-Limiting Defect Analysis in 0.15 μm Process Development",

abstract = "Process development usually has an indispensable period of yield-learning. The length of the period is highly dependent on identification of the root causes of yield-limiting defects and thus failure analysis plays an important role in the yield improvement process. This paper presents the failure analysis of yield-limiting defects in 0.15 (am process development. The failure analysis involves failure mode categorization by MOSAID tester, defective contact identification by contact-level Passive Voltage Contrast (PVC) technique and subsequent Focus Ion Beam (FIB) cross-section followed by Transmission Electron Microscopy (TEM) analysis. Finally, the root causes for the yield-limiting defects were identified.",

author = "Song, \{Z. G.\} and G. Qian and Jiyan Dai and S. Ansari and Oh, \{C. K.\} and S. Redkar",

year = "2001",

month = dec,

day = "1",

language = "English",

pages = "431--435",

booktitle = "Conference Proceedings from the International Symposium for Testing and Failure Analysis",

note = "Proceedings of the 27th International Symposium for Testing and Failure Analysis ; Conference date: 11-11-2001 Through 15-11-2001",

}

TY - GEN

T1 - Yield-Limiting Defect Analysis in 0.15 μm Process Development

AU - Song, Z. G.

AU - Qian, G.

AU - Dai, Jiyan

AU - Ansari, S.

AU - Oh, C. K.

AU - Redkar, S.

PY - 2001/12/1

Y1 - 2001/12/1

N2 - Process development usually has an indispensable period of yield-learning. The length of the period is highly dependent on identification of the root causes of yield-limiting defects and thus failure analysis plays an important role in the yield improvement process. This paper presents the failure analysis of yield-limiting defects in 0.15 (am process development. The failure analysis involves failure mode categorization by MOSAID tester, defective contact identification by contact-level Passive Voltage Contrast (PVC) technique and subsequent Focus Ion Beam (FIB) cross-section followed by Transmission Electron Microscopy (TEM) analysis. Finally, the root causes for the yield-limiting defects were identified.

AB - Process development usually has an indispensable period of yield-learning. The length of the period is highly dependent on identification of the root causes of yield-limiting defects and thus failure analysis plays an important role in the yield improvement process. This paper presents the failure analysis of yield-limiting defects in 0.15 (am process development. The failure analysis involves failure mode categorization by MOSAID tester, defective contact identification by contact-level Passive Voltage Contrast (PVC) technique and subsequent Focus Ion Beam (FIB) cross-section followed by Transmission Electron Microscopy (TEM) analysis. Finally, the root causes for the yield-limiting defects were identified.

UR - https://www.scopus.com/pages/publications/1542300663

M3 - Conference article published in proceeding or book

SP - 431

EP - 435

BT - Conference Proceedings from the International Symposium for Testing and Failure Analysis

T2 - Proceedings of the 27th International Symposium for Testing and Failure Analysis

Y2 - 11 November 2001 through 15 November 2001

ER -

Yield-Limiting Defect Analysis in 0.15 μm Process Development

Abstract

Conference

ASJC Scopus subject areas

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