Yield-Limiting Defect Analysis in 0.15 μm Process Development

Z. G. Song, G. Qian, Jiyan Dai, S. Ansari, C. K. Oh, S. Redkar

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

Process development usually has an indispensable period of yield-learning. The length of the period is highly dependent on identification of the root causes of yield-limiting defects and thus failure analysis plays an important role in the yield improvement process. This paper presents the failure analysis of yield-limiting defects in 0.15 (am process development. The failure analysis involves failure mode categorization by MOSAID tester, defective contact identification by contact-level Passive Voltage Contrast (PVC) technique and subsequent Focus Ion Beam (FIB) cross-section followed by Transmission Electron Microscopy (TEM) analysis. Finally, the root causes for the yield-limiting defects were identified.
Original languageEnglish
Title of host publicationConference Proceedings from the International Symposium for Testing and Failure Analysis
Pages431-435
Number of pages5
Publication statusPublished - 1 Dec 2001
Externally publishedYes
EventProceedings of the 27th International Symposium for Testing and Failure Analysis - Santa Clara, CA, United States
Duration: 11 Nov 200115 Nov 2001

Conference

ConferenceProceedings of the 27th International Symposium for Testing and Failure Analysis
CountryUnited States
CitySanta Clara, CA
Period11/11/0115/11/01

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

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