Abstract
Process development usually has an indispensable period of yield-learning. The length of the period is highly dependent on identification of the root causes of yield-limiting defects and thus failure analysis plays an important role in the yield improvement process. This paper presents the failure analysis of yield-limiting defects in 0.15 (am process development. The failure analysis involves failure mode categorization by MOSAID tester, defective contact identification by contact-level Passive Voltage Contrast (PVC) technique and subsequent Focus Ion Beam (FIB) cross-section followed by Transmission Electron Microscopy (TEM) analysis. Finally, the root causes for the yield-limiting defects were identified.
Original language | English |
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Title of host publication | Conference Proceedings from the International Symposium for Testing and Failure Analysis |
Pages | 431-435 |
Number of pages | 5 |
Publication status | Published - 1 Dec 2001 |
Externally published | Yes |
Event | Proceedings of the 27th International Symposium for Testing and Failure Analysis - Santa Clara, CA, United States Duration: 11 Nov 2001 → 15 Nov 2001 |
Conference
Conference | Proceedings of the 27th International Symposium for Testing and Failure Analysis |
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Country/Territory | United States |
City | Santa Clara, CA |
Period | 11/11/01 → 15/11/01 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Safety, Risk, Reliability and Quality
- Electrical and Electronic Engineering