XPS and TEM study of deposited and Ru-Si solid state reaction grown ruthenium silicides on silicon

Emil V. Jelenković; Suet To; M. G. Blackford; O. Kutsay; Shrawan K. Jha

doi:10.1016/j.mssp.2015.07.085

XPS and TEM study of deposited and Ru-Si solid state reaction grown ruthenium silicides on silicon

Emil V. Jelenković, Suet To, M. G. Blackford, O. Kutsay, Shrawan K. Jha

Research output: Journal article publication › Journal article › Academic research › peer-review

7 Citations (Scopus)

Abstract

Ru2Si3silicide was prepared in two different ways: (i) through a deposition (D) from a Ru2Si3sputtering target and (ii) via a solid state reaction (SSR) of ruthenium thin film with silicon to form a rectifying structure silicide/silicon. Both types of silicides were treated at 700 °C in nitrogen ambient for 5 min in order to facilitate crystallization and solid state reaction, respectively. Transmission electron microcopy (TEM), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were applied to study structural, compositional and chemical properties of the two types of silicides.

Original language	English
Pages (from-to)	817-821
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	40
DOIs	https://doi.org/10.1016/j.mssp.2015.07.085
Publication status	Published - 1 Dec 2015

Keywords

Raman spectroscopy
Ruthenium silicide (Ru Si ) 2 3
Sputtering
TEM
XPS

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mssp.2015.07.085

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title = "XPS and TEM study of deposited and Ru-Si solid state reaction grown ruthenium silicides on silicon",

abstract = "Ru2Si3silicide was prepared in two different ways: (i) through a deposition (D) from a Ru2Si3sputtering target and (ii) via a solid state reaction (SSR) of ruthenium thin film with silicon to form a rectifying structure silicide/silicon. Both types of silicides were treated at 700 °C in nitrogen ambient for 5 min in order to facilitate crystallization and solid state reaction, respectively. Transmission electron microcopy (TEM), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were applied to study structural, compositional and chemical properties of the two types of silicides.",

keywords = "Raman spectroscopy, Ruthenium silicide (Ru Si ) 2 3, Sputtering, TEM, XPS",

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T1 - XPS and TEM study of deposited and Ru-Si solid state reaction grown ruthenium silicides on silicon

AU - Jelenković, Emil V.

AU - To, Suet

AU - Blackford, M. G.

AU - Kutsay, O.

AU - Jha, Shrawan K.

PY - 2015/12/1

Y1 - 2015/12/1

N2 - Ru2Si3silicide was prepared in two different ways: (i) through a deposition (D) from a Ru2Si3sputtering target and (ii) via a solid state reaction (SSR) of ruthenium thin film with silicon to form a rectifying structure silicide/silicon. Both types of silicides were treated at 700 °C in nitrogen ambient for 5 min in order to facilitate crystallization and solid state reaction, respectively. Transmission electron microcopy (TEM), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were applied to study structural, compositional and chemical properties of the two types of silicides.

AB - Ru2Si3silicide was prepared in two different ways: (i) through a deposition (D) from a Ru2Si3sputtering target and (ii) via a solid state reaction (SSR) of ruthenium thin film with silicon to form a rectifying structure silicide/silicon. Both types of silicides were treated at 700 °C in nitrogen ambient for 5 min in order to facilitate crystallization and solid state reaction, respectively. Transmission electron microcopy (TEM), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were applied to study structural, compositional and chemical properties of the two types of silicides.

KW - Raman spectroscopy

KW - Ruthenium silicide (Ru Si ) 2 3

KW - Sputtering

KW - TEM

KW - XPS

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U2 - 10.1016/j.mssp.2015.07.085

DO - 10.1016/j.mssp.2015.07.085

M3 - Journal article

SN - 1369-8001

VL - 40

SP - 817

EP - 821

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

ER -

XPS and TEM study of deposited and Ru-Si solid state reaction grown ruthenium silicides on silicon

Abstract

Keywords

ASJC Scopus subject areas

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