XPS and TEM study of deposited and Ru-Si solid state reaction grown ruthenium silicides on silicon

Emil V. Jelenković, Suet To, M. G. Blackford, O. Kutsay, Shrawan K. Jha

Research output: Journal article publicationJournal articleAcademic researchpeer-review

4 Citations (Scopus)

Abstract

Ru2Si3silicide was prepared in two different ways: (i) through a deposition (D) from a Ru2Si3sputtering target and (ii) via a solid state reaction (SSR) of ruthenium thin film with silicon to form a rectifying structure silicide/silicon. Both types of silicides were treated at 700 °C in nitrogen ambient for 5 min in order to facilitate crystallization and solid state reaction, respectively. Transmission electron microcopy (TEM), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were applied to study structural, compositional and chemical properties of the two types of silicides.
Original languageEnglish
Pages (from-to)817-821
Number of pages5
JournalMaterials Science in Semiconductor Processing
Volume40
DOIs
Publication statusPublished - 1 Dec 2015

Keywords

  • Raman spectroscopy
  • Ruthenium silicide (Ru Si ) 2 3
  • Sputtering
  • TEM
  • XPS

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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