X-ray photoemission spectroscopy of nonmetallic materials: Electronic structures of boron and BxOy

Chung Wo Ong; H. Huang; B. Zheng; R. W.M. Kwok; Y. Y. Hui; W. M. Lau

doi:10.1063/1.1651321

X-ray photoemission spectroscopy of nonmetallic materials: Electronic structures of boron and B_xO_y

Chung Wo Ong, H. Huang, B. Zheng, R. W.M. Kwok, Y. Y. Hui, W. M. Lau

Research output: Journal article publication › Journal article › Academic research › peer-review

149 Citations (Scopus)

Abstract

The electronic structure of boron (B) and BxOywas studied using x-ray photoelectron spectroscopy (XPS). These are nonmetallic materials which possess extreme hardness, and intriguing solid-state structures constructed by a building block of twelve boron atoms in an icosahedron. An XPS shift in non-metallic materials was caused by a change in occupancy of electronic states of impurities and charge trapping defects. The results show that the β-rhombohedral boron have a surface Fermi level located at 0.7±0.1 eV from its valence band maximum (VBM) and a binding energy for its B 1s core level at 187.2 eV from VBM.

Original language	English
Pages (from-to)	3527-3534
Number of pages	8
Journal	Journal of Applied Physics
Volume	95
Issue number	7
DOIs	https://doi.org/10.1063/1.1651321
Publication status	Published - 1 Apr 2004

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.1651321

http://hdl.handle.net/10397/4199

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title = "X-ray photoemission spectroscopy of nonmetallic materials: Electronic structures of boron and BxOy",

abstract = "The electronic structure of boron (B) and BxOywas studied using x-ray photoelectron spectroscopy (XPS). These are nonmetallic materials which possess extreme hardness, and intriguing solid-state structures constructed by a building block of twelve boron atoms in an icosahedron. An XPS shift in non-metallic materials was caused by a change in occupancy of electronic states of impurities and charge trapping defects. The results show that the β-rhombohedral boron have a surface Fermi level located at 0.7±0.1 eV from its valence band maximum (VBM) and a binding energy for its B 1s core level at 187.2 eV from VBM.",

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AU - Ong, Chung Wo

AU - Huang, H.

AU - Zheng, B.

AU - Kwok, R. W.M.

AU - Hui, Y. Y.

AU - Lau, W. M.

PY - 2004/4/1

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N2 - The electronic structure of boron (B) and BxOywas studied using x-ray photoelectron spectroscopy (XPS). These are nonmetallic materials which possess extreme hardness, and intriguing solid-state structures constructed by a building block of twelve boron atoms in an icosahedron. An XPS shift in non-metallic materials was caused by a change in occupancy of electronic states of impurities and charge trapping defects. The results show that the β-rhombohedral boron have a surface Fermi level located at 0.7±0.1 eV from its valence band maximum (VBM) and a binding energy for its B 1s core level at 187.2 eV from VBM.

AB - The electronic structure of boron (B) and BxOywas studied using x-ray photoelectron spectroscopy (XPS). These are nonmetallic materials which possess extreme hardness, and intriguing solid-state structures constructed by a building block of twelve boron atoms in an icosahedron. An XPS shift in non-metallic materials was caused by a change in occupancy of electronic states of impurities and charge trapping defects. The results show that the β-rhombohedral boron have a surface Fermi level located at 0.7±0.1 eV from its valence band maximum (VBM) and a binding energy for its B 1s core level at 187.2 eV from VBM.

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DO - 10.1063/1.1651321

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JF - Journal of Applied Physics

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X-ray photoemission spectroscopy of nonmetallic materials: Electronic structures of boron and B_xO_y

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