X-ray photoemission spectroscopy of nonmetallic materials: Electronic structures of boron and BxOy

Chung Wo Ong, H. Huang, B. Zheng, R. W.M. Kwok, Y. Y. Hui, W. M. Lau

Research output: Journal article publicationJournal articleAcademic researchpeer-review

104 Citations (Scopus)


The electronic structure of boron (B) and BxOywas studied using x-ray photoelectron spectroscopy (XPS). These are nonmetallic materials which possess extreme hardness, and intriguing solid-state structures constructed by a building block of twelve boron atoms in an icosahedron. An XPS shift in non-metallic materials was caused by a change in occupancy of electronic states of impurities and charge trapping defects. The results show that the β-rhombohedral boron have a surface Fermi level located at 0.7±0.1 eV from its valence band maximum (VBM) and a binding energy for its B 1s core level at 187.2 eV from VBM.
Original languageEnglish
Pages (from-to)3527-3534
Number of pages8
JournalJournal of Applied Physics
Issue number7
Publication statusPublished - 1 Apr 2004

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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