Working Principle of Hydrogen Sensor Based on Pentacene Thin-Film Transistor

Bochang Li, P. T. Lai, Wing Man Tang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

14 Citations (Scopus)


A hydrogen sensor based on pentacene organic thin-film transistor (OTFT) with palladium (Pd) source and drain (S/D) electrodes is analyzed in detail. When exposed to H2with different concentrations, the sensor shows a clear change in drain current due to three reasons: 1) work-function change of the source electrode induced by hydrogen absorption; 2) reduced carrier mobility; and 3) increased S/D series resistance both caused by the expansion of the S/D electrodes after absorbing hydrogen. Analysis of the data demonstrates that the first two are the dominant mechanisms. Without the need of heating, rapid, reversible, and concentration-dependent response of the OTFT is observed upon introduction and removal of H2with concentration ranging from 200 to 17 000 ppm.
Original languageEnglish
Article number7953478
Pages (from-to)1132-1135
Number of pages4
JournalIEEE Electron Device Letters
Issue number8
Publication statusPublished - 1 Aug 2017


  • Flexibility
  • HfLaO
  • hydrogen sensors
  • OTFT

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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