A hydrogen sensor based on pentacene organic thin-film transistor (OTFT) with palladium (Pd) source and drain (S/D) electrodes is analyzed in detail. When exposed to H2with different concentrations, the sensor shows a clear change in drain current due to three reasons: 1) work-function change of the source electrode induced by hydrogen absorption; 2) reduced carrier mobility; and 3) increased S/D series resistance both caused by the expansion of the S/D electrodes after absorbing hydrogen. Analysis of the data demonstrates that the first two are the dominant mechanisms. Without the need of heating, rapid, reversible, and concentration-dependent response of the OTFT is observed upon introduction and removal of H2with concentration ranging from 200 to 17 000 ppm.
- hydrogen sensors
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering