Working Principle of Hydrogen Sensor Based on Pentacene Thin-Film Transistor

Bochang Li; P. T. Lai; Wing Man Tang

doi:10.1109/LED.2017.2716954

Working Principle of Hydrogen Sensor Based on Pentacene Thin-Film Transistor

Bochang Li, P. T. Lai, Wing Man Tang

Research output: Journal article publication › Journal article › Academic research › peer-review

17 Citations (Scopus)

Abstract

A hydrogen sensor based on pentacene organic thin-film transistor (OTFT) with palladium (Pd) source and drain (S/D) electrodes is analyzed in detail. When exposed to H2with different concentrations, the sensor shows a clear change in drain current due to three reasons: 1) work-function change of the source electrode induced by hydrogen absorption; 2) reduced carrier mobility; and 3) increased S/D series resistance both caused by the expansion of the S/D electrodes after absorbing hydrogen. Analysis of the data demonstrates that the first two are the dominant mechanisms. Without the need of heating, rapid, reversible, and concentration-dependent response of the OTFT is observed upon introduction and removal of H2with concentration ranging from 200 to 17 000 ppm.

Original language	English
Article number	7953478
Pages (from-to)	1132-1135
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	38
Issue number	8
DOIs	https://doi.org/10.1109/LED.2017.2716954
Publication status	Published - 1 Aug 2017

Keywords

Flexibility
HfLaO
hydrogen sensors
OTFT

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2017.2716954

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title = "Working Principle of Hydrogen Sensor Based on Pentacene Thin-Film Transistor",

abstract = "A hydrogen sensor based on pentacene organic thin-film transistor (OTFT) with palladium (Pd) source and drain (S/D) electrodes is analyzed in detail. When exposed to H2with different concentrations, the sensor shows a clear change in drain current due to three reasons: 1) work-function change of the source electrode induced by hydrogen absorption; 2) reduced carrier mobility; and 3) increased S/D series resistance both caused by the expansion of the S/D electrodes after absorbing hydrogen. Analysis of the data demonstrates that the first two are the dominant mechanisms. Without the need of heating, rapid, reversible, and concentration-dependent response of the OTFT is observed upon introduction and removal of H2with concentration ranging from 200 to 17 000 ppm.",

keywords = "Flexibility, HfLaO, hydrogen sensors, OTFT",

author = "Bochang Li and Lai, {P. T.} and Tang, {Wing Man}",

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AU - Lai, P. T.

AU - Tang, Wing Man

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Y1 - 2017/8/1

N2 - A hydrogen sensor based on pentacene organic thin-film transistor (OTFT) with palladium (Pd) source and drain (S/D) electrodes is analyzed in detail. When exposed to H2with different concentrations, the sensor shows a clear change in drain current due to three reasons: 1) work-function change of the source electrode induced by hydrogen absorption; 2) reduced carrier mobility; and 3) increased S/D series resistance both caused by the expansion of the S/D electrodes after absorbing hydrogen. Analysis of the data demonstrates that the first two are the dominant mechanisms. Without the need of heating, rapid, reversible, and concentration-dependent response of the OTFT is observed upon introduction and removal of H2with concentration ranging from 200 to 17 000 ppm.

AB - A hydrogen sensor based on pentacene organic thin-film transistor (OTFT) with palladium (Pd) source and drain (S/D) electrodes is analyzed in detail. When exposed to H2with different concentrations, the sensor shows a clear change in drain current due to three reasons: 1) work-function change of the source electrode induced by hydrogen absorption; 2) reduced carrier mobility; and 3) increased S/D series resistance both caused by the expansion of the S/D electrodes after absorbing hydrogen. Analysis of the data demonstrates that the first two are the dominant mechanisms. Without the need of heating, rapid, reversible, and concentration-dependent response of the OTFT is observed upon introduction and removal of H2with concentration ranging from 200 to 17 000 ppm.

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M3 - Journal article

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ER -

Working Principle of Hydrogen Sensor Based on Pentacene Thin-Film Transistor

Abstract

Keywords

ASJC Scopus subject areas

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