Abstract
Ultraviolet random lasing action with a tunable wavelength between 375 and 400 nm has been realized from highly disordered Zn1-xMgxO (for 0≤x≤0.3) polycrystalline thin films deposited on silicon substrates by the filtered cathodic vacuum arc technique. The emission energy can be continuously tuned within the ranges of 3.10-3.31 eV, while the corresponding lasing threshold remained relatively uniform.
| Original language | English |
|---|---|
| Pages (from-to) | 16-18 |
| Number of pages | 3 |
| Journal | Journal of Crystal Growth |
| Volume | 312 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 15 Dec 2009 |
| Externally published | Yes |
Keywords
- Random lasing
- Thin film
- Wavelength tunable
- ZnMgO
- ZnO
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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