Wafer-Scale Synthesis of High-Quality Semiconducting Two-Dimensional Layered InSe with Broadband Photoresponse

Zhibin Yang, Wenjing Jie, Chun Hin Mak, Shenghuang Lin, Huihong Lin, Xianfeng Yang, Feng Yan, Shu Ping Lau, Jianhua Hao

Research output: Journal article publicationJournal articleAcademic researchpeer-review

282 Citations (Scopus)


Large-scale synthesis of two-dimensional (2D) materials is one of the significant issues for fabricating layered materials into practical devices. As one of the typical III-VI semiconductors, InSe has attracted much attention due to its outstanding electrical transport property, attractive quantum physics characteristics, and dramatic photoresponse when it is reduced to atomic scale. However, scalable synthesis of single phase 2D InSe has not yet been achieved so far, greatly hindering further fundamental studies and device applications. Here, we demonstrate the direct growth of wafer-scale layered InSe nanosheets by pulsed laser deposition (PLD). The obtained InSe layers exhibit good uniformity, high crystallinity with macro texture feature, and stoichiometric growth by in situ precise control. The characterization of optical properties indicates that PLD grown InSe nanosheets have a wide range tunable band gap (1.26-2.20 eV) among the large-scale 2D crystals. The device demonstration of field-effect transistor shows the n-type channel feature with high mobility of 10 cm2V-1s-1. Upon illumination, InSe-based phototransistors show a broad photoresponse to the wavelengths from ultraviolet to near-infrared. The maximum photoresponsivity attains 27 A/W, plus a response time of 0.5 s for the rise and 1.7 s for the decay, demonstrating the strong and fast photodetection ability. Our findings suggest that the PLD grown InSe would be a promising choice for future device applications in the 2D limit.
Original languageEnglish
Pages (from-to)4225-4236
Number of pages12
JournalACS Nano
Issue number4
Publication statusPublished - 25 Apr 2017


  • InSe
  • monolayer
  • photoresponse
  • pulsed laser deposition
  • wafer-scale synthesis

ASJC Scopus subject areas

  • General Materials Science
  • General Engineering
  • General Physics and Astronomy


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