Wafer-Scale Single-Crystalline AB-Stacked Bilayer Graphene

Van Luan Nguyen, David J. Perello, Seunghun Lee, Chang Tai Nai, Bong Gyu Shin, Joong Gyu Kim, Ho Yeol Park, Hu Young Jeong, Jiong Zhao, Quoc An Vu, Sang Hyub Lee, Kian Ping Loh, Se Young Jeong, Young Hee Lee

Research output: Journal article publicationJournal articleAcademic researchpeer-review

78 Citations (Scopus)


A wafer-scale formation of artificial single-crystalline AB-stacked bilayer grapheme (AB-BLG) via aligned transfer of two single-crystalline monolayers was reported. The AB-BLG was encapsulated between two hexagonal boron nitride (h-BN) flakes which play a role as back and top gate dielectrics. The top gate was swept from 20 to 20 V while applying back gate. from Si substrate. The resistance reaches maximum at highest displacement field region (the top-left and bottom-right), confirming the tunability of bandgap with perpendicular dipole electric field. The on/off ratio was initially 4 but rises to 16 after gating at room temperature. To demonstrate the electrical and stacking-order uniformity on a wafer scale cm in diameter single-crystalline AB-BLG was transferred onto a SiO2/Si substrate, followed by the fabrication of 380 dual-gate devices by standard photolithography processes. The transistor transport characteristics were measured one by one to obtain carrier mobility and on/off ratio of all devices. All the devices show nearly similar on/off ratio near 2.5 before and 8 after opening bandgap. This confi rms the formation of AB-BLG uniformly over the entire area.
Original languageEnglish
Pages (from-to)8177-8183
Number of pages7
JournalAdvanced Materials
Publication statusPublished - 1 Jan 2016
Externally publishedYes


  • AB-stacked bilayers
  • graphene growth
  • quantum Hall effect
  • single crystalline
  • wafer-scale

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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