TY - JOUR
T1 - Wafer-Scale Fabrication of Two-Dimensional PtS2/PtSe2 Heterojunctions for Efficient and Broad band Photodetection
AU - Yuan, Jian
AU - Sun, Tian
AU - Hu, Zhixin
AU - Yu, Wenzhi
AU - Ma, Weiliang
AU - Zhang, Kai
AU - Sun, Baoquan
AU - Lau, Shu Ping
AU - Bao, Qiaoliang
AU - Lin, Shenghuang
AU - Li, Shaojuan
PY - 2018/11/28
Y1 - 2018/11/28
N2 - The fabrication of van der Waals heterostructures mainly extends to two-dimensional (2D) materials that are exfoliated from their bulk counterparts, which is greatly limited by high-volume manufacturing. Here, we demonstrate multilayered PtS2/PtSe2 heterojunctions covering a large area on the SiO2/Si substrate with a maximum size of 2″ in diameter, offering throughputs that can meet the practical application demand. Theoretical simulation was carried out to understand the electronic properties of the PtS2/PtSe2 heterojunctions. Zero-bias photoresponse in the heterojunctions is observed under laser illumination of different wavelengths (405-2200 nm). The PtS2/PtSe2 heterojunctions exhibit broad band photoresponse and high quantum efficiency at infrared wavelengths with lower bounds for the external quantum efficiencies being 1.2% at 1064 nm, 0.2% at 1550 nm, and 0.05% at 2200 nm, and also relatively fast response time at the dozens of millisecond level. The large area, broad band 2D heterojunction photodetector demonstrated in this work further corroborates the great potential of 2D materials in the future low-energy optoelectronics.
AB - The fabrication of van der Waals heterostructures mainly extends to two-dimensional (2D) materials that are exfoliated from their bulk counterparts, which is greatly limited by high-volume manufacturing. Here, we demonstrate multilayered PtS2/PtSe2 heterojunctions covering a large area on the SiO2/Si substrate with a maximum size of 2″ in diameter, offering throughputs that can meet the practical application demand. Theoretical simulation was carried out to understand the electronic properties of the PtS2/PtSe2 heterojunctions. Zero-bias photoresponse in the heterojunctions is observed under laser illumination of different wavelengths (405-2200 nm). The PtS2/PtSe2 heterojunctions exhibit broad band photoresponse and high quantum efficiency at infrared wavelengths with lower bounds for the external quantum efficiencies being 1.2% at 1064 nm, 0.2% at 1550 nm, and 0.05% at 2200 nm, and also relatively fast response time at the dozens of millisecond level. The large area, broad band 2D heterojunction photodetector demonstrated in this work further corroborates the great potential of 2D materials in the future low-energy optoelectronics.
KW - broad band photodetection
KW - photoresponsivity
KW - quantum efficiency
KW - self-driving operation
KW - van der Waals heterostructures
KW - wafer-scale fabrication
UR - http://www.scopus.com/inward/record.url?scp=85056845502&partnerID=8YFLogxK
U2 - 10.1021/acsami.8b13620
DO - 10.1021/acsami.8b13620
M3 - Journal article
C2 - 30387989
AN - SCOPUS:85056845502
SN - 1944-8244
VL - 10
SP - 40614
EP - 40622
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 47
ER -