Visible-light enhanced charge storage characteristics of amorphous Ni-doped HfO2 films

T. Zhang, Z. Zhang, C. H. Chan, L. T. Li, M. L. Wei, X. S. Meng, J. Y. Dai, X. Y. Qiu

Research output: Journal article publicationJournal articleAcademic researchpeer-review

Abstract

Photo-induced changes of capacitance-voltage curves for amorphous Ni-doped HfO2 films are probed under different visible light illumination conditions. The illumination-induced minority carriers injection effect enhances the negative shift of flat band voltage, and results in a significant enlargement of memory window. This enlargement exhibits negligible dependence on light wavelength but strong dependence on light intensity in the visible light region. A large memory window width of 6.12 V is obtained under illumination using 650 nm red light with an intensity of 5 mW cm-2. Acceptable endurance and retention properties show potential applications on new-type photosensitive nano-floating-gate nonvolatile memory devices.

Original languageEnglish
Article number305105
JournalJournal of Physics D: Applied Physics
Volume51
Issue number30
DOIs
Publication statusPublished - 6 Jul 2018

Keywords

  • charge storage
  • Ni-doped HfO film
  • visible light illumination

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this