Abstract
Photo-induced changes of capacitance-voltage curves for amorphous Ni-doped HfO2 films are probed under different visible light illumination conditions. The illumination-induced minority carriers injection effect enhances the negative shift of flat band voltage, and results in a significant enlargement of memory window. This enlargement exhibits negligible dependence on light wavelength but strong dependence on light intensity in the visible light region. A large memory window width of 6.12 V is obtained under illumination using 650 nm red light with an intensity of 5 mW cm-2. Acceptable endurance and retention properties show potential applications on new-type photosensitive nano-floating-gate nonvolatile memory devices.
Original language | English |
---|---|
Article number | 305105 |
Journal | Journal of Physics D: Applied Physics |
Volume | 51 |
Issue number | 30 |
DOIs | |
Publication status | Published - 6 Jul 2018 |
Keywords
- charge storage
- Ni-doped HfO film
- visible light illumination
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films