Abstract
I/O is becoming one of major performance bottlenecks in NAND-flash-based mobile devices. Novel nonvolatile memories (NVMs), such as phase change memory and spin-transfer torque random access memory, can provide fast read/write operations. In this paper, we propose a unified NVM/flash architecture to improve the I/O performance. A transparent scheme, virtualized flash (vFlash), is also proposed to manage the unified architecture. Within vFlash, interapp and intra-app techniques are proposed to optimize the application performance by exploiting the historical locality and I/O access patterns of applications. Since vFlash is on the bottom of the I/O stack, the application features will be lost. Therefore, we also propose a cross-layer technique to transfer the application information from the application layer to the vFlash layer. The proposed scheme is evaluated based on an Android platform, and the experimental results show that the proposed scheme can effectively improve the I/O performance of mobile devices.
| Original language | English |
|---|---|
| Article number | 7593233 |
| Pages (from-to) | 1203-1214 |
| Number of pages | 12 |
| Journal | IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems |
| Volume | 36 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 1 Jul 2017 |
Keywords
- Applications
- cross layer
- I/O behaviors
- nonvolatile memory (NVM)
ASJC Scopus subject areas
- Software
- Computer Graphics and Computer-Aided Design
- Electrical and Electronic Engineering