Vacuum electron field emission from SnO2 nanowhiskers synthesized by thermal evaporation

S. H. Luo; Q. Wan; W. L. Liu; M. Zhang; Z. F. Di; S. Y. Wang; Z. T. Song; C. L. Lin; Jiyan Dai

doi:10.1088/0957-4484/15/11/006

Vacuum electron field emission from SnO₂ nanowhiskers synthesized by thermal evaporation

S. H. Luo, Q. Wan, W. L. Liu, M. Zhang, Z. F. Di, S. Y. Wang, Z. T. Song, C. L. Lin, Jiyan Dai

Research output: Journal article publication › Journal article › Academic research › peer-review

67 Citations (Scopus)

Abstract

Rod-shaped and wire-shaped SnO2 nanowhiskers were synthesized by thermal evaporating of tin powders at 900°C. Three Raman peaks (474, 632, 774 cm-1) showed the typical feature of the rutile phase of as-synthesized SnO2 nanowhiskers, which was consistent with the result of x-ray diffraction. A relatively low turn-on field of 1.37 V μm -1 at a current density of 0.1 μA cm-2 was obtained. The dependence of emission current density on the electric field followed a Fowler-Nordheim relationship. Our results indicated that SnO2 nanowhiskers had an interesting FE property as a wide band gap semiconductor.

Original language	English
Pages (from-to)	1424-1427
Number of pages	4
Journal	Nanotechnology
Volume	15
Issue number	11
DOIs	https://doi.org/10.1088/0957-4484/15/11/006
Publication status	Published - 1 Nov 2004

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/15/11/006

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title = "Vacuum electron field emission from SnO2 nanowhiskers synthesized by thermal evaporation",

abstract = "Rod-shaped and wire-shaped SnO2 nanowhiskers were synthesized by thermal evaporating of tin powders at 900°C. Three Raman peaks (474, 632, 774 cm-1) showed the typical feature of the rutile phase of as-synthesized SnO2 nanowhiskers, which was consistent with the result of x-ray diffraction. A relatively low turn-on field of 1.37 V μm -1 at a current density of 0.1 μA cm-2 was obtained. The dependence of emission current density on the electric field followed a Fowler-Nordheim relationship. Our results indicated that SnO2 nanowhiskers had an interesting FE property as a wide band gap semiconductor.",

author = "Luo, {S. H.} and Q. Wan and Liu, {W. L.} and M. Zhang and Di, {Z. F.} and Wang, {S. Y.} and Song, {Z. T.} and Lin, {C. L.} and Jiyan Dai",

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T1 - Vacuum electron field emission from SnO2 nanowhiskers synthesized by thermal evaporation

AU - Luo, S. H.

AU - Wan, Q.

AU - Liu, W. L.

AU - Zhang, M.

AU - Di, Z. F.

AU - Wang, S. Y.

AU - Song, Z. T.

AU - Lin, C. L.

AU - Dai, Jiyan

PY - 2004/11/1

Y1 - 2004/11/1

N2 - Rod-shaped and wire-shaped SnO2 nanowhiskers were synthesized by thermal evaporating of tin powders at 900°C. Three Raman peaks (474, 632, 774 cm-1) showed the typical feature of the rutile phase of as-synthesized SnO2 nanowhiskers, which was consistent with the result of x-ray diffraction. A relatively low turn-on field of 1.37 V μm -1 at a current density of 0.1 μA cm-2 was obtained. The dependence of emission current density on the electric field followed a Fowler-Nordheim relationship. Our results indicated that SnO2 nanowhiskers had an interesting FE property as a wide band gap semiconductor.

AB - Rod-shaped and wire-shaped SnO2 nanowhiskers were synthesized by thermal evaporating of tin powders at 900°C. Three Raman peaks (474, 632, 774 cm-1) showed the typical feature of the rutile phase of as-synthesized SnO2 nanowhiskers, which was consistent with the result of x-ray diffraction. A relatively low turn-on field of 1.37 V μm -1 at a current density of 0.1 μA cm-2 was obtained. The dependence of emission current density on the electric field followed a Fowler-Nordheim relationship. Our results indicated that SnO2 nanowhiskers had an interesting FE property as a wide band gap semiconductor.

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DO - 10.1088/0957-4484/15/11/006

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Vacuum electron field emission from SnO₂ nanowhiskers synthesized by thermal evaporation

Abstract

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