UV ozone passivation of the metal/dielectric interface for HfO2-based organic thin film transistors

Wing Man Tang; W. T. Ng; M. G. Helander; M. T. Greiner; Z. H. Lu

doi:10.1116/1.3498744

UV ozone passivation of the metal/dielectric interface for HfO₂-based organic thin film transistors

Wing Man Tang, W. T. Ng, M. G. Helander, M. T. Greiner, Z. H. Lu

Research output: Journal article publication › Journal article › Academic research › peer-review

7 Citations (Scopus)

Abstract

Ultraviolet (UV) ozone passivation of the metal/dielectric interface was investigated in HfO2-based devices. It is found that the passivation of Al gate reduces the gate leakage current by two orders of magnitude and increases the breakdown field strength by 14%. A thicker wide-band gap Al2O3interlayer formed on the Al gate during UV ozone treatment improves the interface quality and suppresses the leakage associated with the high- k material. Copper phthalocyanine-based organic thin-film transistors with HfO2as gate dielectric were fabricated on glass. UV ozone passivated devices exhibited a low threshold voltage of -0.29 V and a low subthreshold slope of 0.38 V/decade, demonstrating the advantage of UV ozone passivation.

Original language	English
Pages (from-to)	1100-1103
Number of pages	4
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	28
Issue number	6
DOIs	https://doi.org/10.1116/1.3498744
Publication status	Published - 1 Jan 2010
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1116/1.3498744

Cite this

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title = "UV ozone passivation of the metal/dielectric interface for HfO2-based organic thin film transistors",

abstract = "Ultraviolet (UV) ozone passivation of the metal/dielectric interface was investigated in HfO2-based devices. It is found that the passivation of Al gate reduces the gate leakage current by two orders of magnitude and increases the breakdown field strength by 14%. A thicker wide-band gap Al2O3interlayer formed on the Al gate during UV ozone treatment improves the interface quality and suppresses the leakage associated with the high- k material. Copper phthalocyanine-based organic thin-film transistors with HfO2as gate dielectric were fabricated on glass. UV ozone passivated devices exhibited a low threshold voltage of -0.29 V and a low subthreshold slope of 0.38 V/decade, demonstrating the advantage of UV ozone passivation.",

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UV ozone passivation of the metal/dielectric interface for HfO₂-based organic thin film transistors. / Tang, Wing Man; Ng, W. T.; Helander, M. G. et al.
In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 28, No. 6, 01.01.2010, p. 1100-1103.

Research output: Journal article publication › Journal article › Academic research › peer-review

TY - JOUR

T1 - UV ozone passivation of the metal/dielectric interface for HfO2-based organic thin film transistors

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AU - Ng, W. T.

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AU - Lu, Z. H.

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UV ozone passivation of the metal/dielectric interface for HfO₂-based organic thin film transistors

Abstract

ASJC Scopus subject areas

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