UV ozone passivation of the metal/dielectric interface for HfO2-based organic thin film transistors

Wing Man Tang, W. T. Ng, M. G. Helander, M. T. Greiner, Z. H. Lu

Research output: Journal article publicationJournal articleAcademic researchpeer-review

7 Citations (Scopus)


Ultraviolet (UV) ozone passivation of the metal/dielectric interface was investigated in HfO2-based devices. It is found that the passivation of Al gate reduces the gate leakage current by two orders of magnitude and increases the breakdown field strength by 14%. A thicker wide-band gap Al2O3interlayer formed on the Al gate during UV ozone treatment improves the interface quality and suppresses the leakage associated with the high- k material. Copper phthalocyanine-based organic thin-film transistors with HfO2as gate dielectric were fabricated on glass. UV ozone passivated devices exhibited a low threshold voltage of -0.29 V and a low subthreshold slope of 0.38 V/decade, demonstrating the advantage of UV ozone passivation.
Original languageEnglish
Pages (from-to)1100-1103
Number of pages4
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Issue number6
Publication statusPublished - 1 Jan 2010
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this