TY - JOUR
T1 - Unveiling the Critical Intermediate Stages during Chemical Vapor Deposition of Two-Dimensional Rhenium Diselenide
AU - Chen, Xin
AU - Wong, Lok Wing
AU - Huang, Lingli
AU - Zheng, Fangyuan
AU - Huang, Ran
AU - Lau, Shu Ping
AU - Lee, Chun Sing
AU - Zhao, Jiong
AU - Deng, Qingming
AU - Ly, Thuc Hue
N1 - Funding Information:
This work was supported by the National Science Foundation of China (Project Nos. 51872248, 21703076, and 51922113), the Hong Kong Research Grant Council under the Early Career Scheme (Project No. 25301018), the Hong Kong Research Grant Council General Research Fund (Project Nos. 11300820 and 15302419), the City University of Hong Kong (Project Nos. 9680241 and 9229074), The Hong Kong Polytechnic University (Project Nos. 1-ZVGH and ZVRP), the Shenzhen Science, Technology and Innovation Commission (Project No. JCYJ20200109110213442), the Natural Science Foundation of Jiangsu Province of China (Project No. BK202100XX), and the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (No. 18KJA140001).
Publisher Copyright:
© 2021 American Chemical Society.
PY - 2021/9/14
Y1 - 2021/9/14
N2 - Two-dimensional (2D) transition metal dichalcogenides (TMDs) are promising materials for numerous emergent applications. Here, we apply atomic-resolution scanning transmission electron microscopy (TEM) to resolve the intermediate stages during chemical vapor deposition (CVD) synthesis of 2D rhenium diselenide (ReSe2). Contradictory to the conventional growth models proposed previously, stable intermediate species, viz., molecular metal chalcogenide clusters, are experimentally unveiled. These molecular clusters present in the chemical vapor deposition chamber can significantly alter the growth kinetics, mass transport, and surface anchoring sites. The new layer nucleation and the formed flake morphology are both substantially influenced. Our work resolved the critical question of whether nucleation occurs in atmosphere or on the solid surface. Besides, additional experiments show that the hydrogen environment in the CVD chamber can mitigate the aggregation problem of clusters, which is decisive for obtaining uniform 2D full films. Combined with density functional theory (DFT) calculations, the key reaction steps during growth are identified. Here, we show a clear picture of the debated growth mechanisms of 2D TMDs, expected to facilitate further optimization of CVD growth conditions to achieve stable mass production.
AB - Two-dimensional (2D) transition metal dichalcogenides (TMDs) are promising materials for numerous emergent applications. Here, we apply atomic-resolution scanning transmission electron microscopy (TEM) to resolve the intermediate stages during chemical vapor deposition (CVD) synthesis of 2D rhenium diselenide (ReSe2). Contradictory to the conventional growth models proposed previously, stable intermediate species, viz., molecular metal chalcogenide clusters, are experimentally unveiled. These molecular clusters present in the chemical vapor deposition chamber can significantly alter the growth kinetics, mass transport, and surface anchoring sites. The new layer nucleation and the formed flake morphology are both substantially influenced. Our work resolved the critical question of whether nucleation occurs in atmosphere or on the solid surface. Besides, additional experiments show that the hydrogen environment in the CVD chamber can mitigate the aggregation problem of clusters, which is decisive for obtaining uniform 2D full films. Combined with density functional theory (DFT) calculations, the key reaction steps during growth are identified. Here, we show a clear picture of the debated growth mechanisms of 2D TMDs, expected to facilitate further optimization of CVD growth conditions to achieve stable mass production.
UR - http://www.scopus.com/inward/record.url?scp=85114858586&partnerID=8YFLogxK
U2 - 10.1021/acs.chemmater.1c02144
DO - 10.1021/acs.chemmater.1c02144
M3 - Journal article
AN - SCOPUS:85114858586
SN - 0897-4756
VL - 33
SP - 7039
EP - 7046
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 17
ER -