Unraveling the high open circuit voltage and high performance of integrated perovskite/Organic bulk-heterojunction solar cells

Shiqi Dong, Yongsheng Liu, Ziruo Hong, Enping Yao, Pengyu Sun, Lei Meng, Yuze Lin, Jinsong Huang, Gang Li, Yang Yang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

43 Citations (Scopus)

Abstract

We have demonstrated high-performance integrated perovskite/bulk-heterojunction (BHJ) solar cells due to the low carrier recombination velocity, high open circuit voltage (VOC), and increased light absorption ability in near-infrared (NIR) region of integrated devices. In particular, we find that the VOCof the integrated devices is dominated by (or pinned to) the perovskite cells, not the organic photovoltaic cells. A Quasi-Fermi Level Pinning Model was proposed to understand the working mechanism and the origin of the VOCof the integrated perovskite/BHJ solar cell, which following that of the perovskite solar cell and is much higher than that of the low bandgap polymer based organic BHJ solar cell. Evidence for the model was enhanced by examining the charge carrier behavior and photovoltaic behavior of the integrated devices under illumination of monochromatic light-emitting diodes at different characteristic wavelength. This finding shall pave an interesting possibility for integrated photovoltaic devices to harvest low energy photons in NIR region and further improve the current density without sacrificing VOC, thus providing new opportunities and significant implications for future industry applications of this kind of integrated solar cells.
Original languageEnglish
Pages (from-to)5140-5147
Number of pages8
JournalNano Letters
Volume17
Issue number8
DOIs
Publication statusPublished - 9 Aug 2017
Externally publishedYes

Keywords

  • bulk heterojunction
  • Fermi level
  • Perovskite
  • photovoltaic

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this