Unified non-volatile memory and NAND flash memory architecture in smartphones

Renhai Chen, Yi Wang, Jingtong Hu, Duo Liu, Zili Shao, Yong Guan

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

18 Citations (Scopus)


I/O is becoming one of major performance bottlenecks in NAND-flash-based smartphones. Novel NVMs (nonvolatile memories), such as PCM (Phase Change Memory) and STT-RAM (Spin-Transfer Torque Random Access Memory), can provide fast read/write operations. In this paper, we propose an unified NVM/flash architecture to improve the I/O performance. A transparent scheme, vFlash (Virtualized Flash), is also proposed to manage the unified architecture. Within vFlash, inter-app technique is proposed to optimize the application performance by exploiting the historic locality of applications. Since vFlash is on the bottom of the I/O stack, the application features will be lost. Therefore, we also propose a cross-layer technique to transfer the application information from the application layer to the vFlash layer. The proposed scheme is evaluated based on a real Android platform, and the experimental results show that the read and write performance for the proposed scheme is 2.45 times and 3.37 times better than that of the stock Android 4.2 system, respectively.
Original languageEnglish
Title of host publication20th Asia and South Pacific Design Automation Conference, ASP-DAC 2015
Number of pages6
ISBN (Electronic)9781479977925
Publication statusPublished - 11 Mar 2015
Event2015 20th Asia and South Pacific Design Automation Conference, ASP-DAC 2015 - Chiba, Japan
Duration: 19 Jan 201522 Jan 2015


Conference2015 20th Asia and South Pacific Design Automation Conference, ASP-DAC 2015

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Modelling and Simulation

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