Unification of bulk and interface electroresistive switching in oxide systems

A. Ruotolo, Chi Wah Leung, C. Y. Lam, W. F. Cheng, K. H. Wong, G. P. Pepe

Research output: Journal article publicationJournal articleAcademic researchpeer-review

21 Citations (Scopus)

Abstract

We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact ionization is at the origin of the switching. Analyses of the capacitance-voltage and conductance-voltage curves through a simple model show that an atomic rearrangement is involved in the process. Switching in these systems is a bulk effect, not strictly confined at the interface but at the charge space region.
Original languageEnglish
Article number233103
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume77
Issue number23
DOIs
Publication statusPublished - 13 Jun 2008

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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