Unification of bulk and interface electroresistive switching in oxide systems

A. Ruotolo, Chi Wah Leung, C. Y. Lam, W. F. Cheng, K. H. Wong, G. P. Pepe

Research output: Journal article publicationJournal articleAcademic researchpeer-review

22 Citations (Scopus)


We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact ionization is at the origin of the switching. Analyses of the capacitance-voltage and conductance-voltage curves through a simple model show that an atomic rearrangement is involved in the process. Switching in these systems is a bulk effect, not strictly confined at the interface but at the charge space region.
Original languageEnglish
Article number233103
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number23
Publication statusPublished - 13 Jun 2008

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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