Ultraviolet ZnO random laser diodes

Siu Fung Yu, Hui Ying Yang

Research output: Chapter in book / Conference proceedingChapter in an edited book (as author)Academic researchpeer-review

Abstract

ZnO, which is a wide bandgap (3.37 eV) semiconductor, has a high exciton binding energy of 60 meV [1]. Furthermore, ZnO is an inexpensive, relatively abundant, chemically stable, easy to prepare, and nontoxic material. Therefore, ZnO has been recognized to be a promising candidate for the fabrication of low-cost ultraviolet (UV) optoelectronic devices. One of the most promising applications of ZnO is to replace indium tin oxide (ITO) in the displays and photovoltaic panels due to the low cost of transparent conductors. In addition, due to the conductive nature of ZnO, it has the potential to be used as the semiconductor materials for making of inexpensive UV optoelectronic devices such as UV laser diodes. Nevertheless, there are not more than 10 original reports on the realization of UV ZnO laser diodes that have been published during the past decade [2-11]. This may be due to two technical challenges that need to be overcome before ZnO can be fully utilized to fabricate UV laser diodes.

Original languageEnglish
Title of host publicationHandbook of Zinc Oxide and Related Materials
Subtitle of host publicationVolume Two, Devices and Nano-Engineering
PublisherCRC Press
Pages339-365
Number of pages27
ISBN (Electronic)9781439855751
ISBN (Print)9781439855744
Publication statusPublished - 1 Jan 2012

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

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