Ultraviolet random lasing action from highly disordered n-AlN/p-GaN heterojunction

H. Y. Yang, Siu Fung Yu, J. I. Wong, Z. H. Cen, H. K. Liang, T. P. Chen

Research output: Journal article publicationJournal articleAcademic researchpeer-review

13 Citations (Scopus)


Room-temperature random lasing is achieved from an n-AlN/p-GaN heterojunction. The highly disordered n-AlN layer, which was deposited on p-GaN:Mg layer via radio frequency magnetron sputtering, acts as a scattering medium to sustain coherent optical feedback. The p-GaN:Mg layer grown on sapphire provides optical amplification to the scattered light propagating along the heterojunction. Hence, lasing peaks of line width less than 0.4 nm are emerged from the emission spectra at round 370 nm for the heterojunction under forward bias larger than 5.1 V. Lasing characteristics of the heterojunction are in agreement with the behavior of random lasers.
Original languageEnglish
Pages (from-to)1726-1730
Number of pages5
JournalACS Applied Materials and Interfaces
Issue number5
Publication statusPublished - 25 May 2011


  • Highly disordered AlN thin films
  • Laser diode
  • Ultraviolet random lasing

ASJC Scopus subject areas

  • General Materials Science


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