Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films

H. Cao, Y. G. Zhao, H. C. Ong, S. T. Ho, Jiyan Dai, J. Y. Wu, R. P.H. Chang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

489 Citations (Scopus)


A semiconductor laser whose cavities are "self-formed" due to strong optical scattering in highly disordered gain media is demonstrated. The lasers are made of zinc oxide polycrystalline films grown on amorphous fused silica substrates. Lasing occurs at an ultraviolet wavelength of ∼380 nm under optical pumping. Actual images of the microscopic laser cavities formed by multiple scattering have been captured. These results suggest the possibility of using disordered semiconductor microstructures as alternative sources of coherent light emission.
Original languageEnglish
Pages (from-to)3656-3658
Number of pages3
JournalApplied Physics Letters
Issue number25
Publication statusPublished - 1 Dec 1998
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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