Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films

H. Cao; Y. G. Zhao; H. C. Ong; S. T. Ho; Jiyan Dai; J. Y. Wu; R. P.H. Chang

doi:10.1063/1.122853

Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films

H. Cao, Y. G. Zhao, H. C. Ong, S. T. Ho, Jiyan Dai, J. Y. Wu, R. P.H. Chang

Research output: Journal article publication › Journal article › Academic research › peer-review

507 Citations (Scopus)

Abstract

A semiconductor laser whose cavities are "self-formed" due to strong optical scattering in highly disordered gain media is demonstrated. The lasers are made of zinc oxide polycrystalline films grown on amorphous fused silica substrates. Lasing occurs at an ultraviolet wavelength of ∼380 nm under optical pumping. Actual images of the microscopic laser cavities formed by multiple scattering have been captured. These results suggest the possibility of using disordered semiconductor microstructures as alternative sources of coherent light emission.

Original language	English
Pages (from-to)	3656-3658
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	25
DOIs	https://doi.org/10.1063/1.122853
Publication status	Published - 1 Dec 1998
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.122853

Cite this

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AU - Chang, R. P.H.

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Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films

Abstract

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