Ultraviolet lasing characteristics of ZnS microbelt lasers

H. Zhu; S. C. Su; Siu Fung Yu; W. F. Zhang; C. C. Ling; H. Y. Yang

doi:10.1109/JSTQE.2013.2242849

Ultraviolet lasing characteristics of ZnS microbelt lasers

H. Zhu, S. C. Su, Siu Fung Yu, W. F. Zhang, C. C. Ling, H. Y. Yang

Research output: Journal article publication › Journal article › Academic research › peer-review

4 Citations (Scopus)

Abstract

Investigation on the room-temperature ultraviolet lasing characteristics of a single ZnS microbelt laser is presented. Lasing emission with peak wavelength at round 335 nm is observed from the hexagonal-wurtzite phase of ZnS microbelt under optical excitation. This is due to the Fabry-Perot resonance along the length of the microbelt. By studying the low-temperature and time-resolved photoluminescence, it is verified that the corresponding lasing characteristics are attributed to the excitonic optical gain process. Furthermore, the rectangular cross-sectional nanostructure of ZnS microbelt suppresses TM polarization for excitation power lower than ∼1.4 times the threshold. Hence, ZnS microbelts can be a promising building block to realize ultraviolet semiconductor lasers with control of laser polarization.

Original language	English
Article number	6449279
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	19
Issue number	4
DOIs	https://doi.org/10.1109/JSTQE.2013.2242849
Publication status	Published - 22 May 2013

Keywords

Microcavities
semiconductor lasers
ZnS

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/JSTQE.2013.2242849

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title = "Ultraviolet lasing characteristics of ZnS microbelt lasers",

abstract = "Investigation on the room-temperature ultraviolet lasing characteristics of a single ZnS microbelt laser is presented. Lasing emission with peak wavelength at round 335 nm is observed from the hexagonal-wurtzite phase of ZnS microbelt under optical excitation. This is due to the Fabry-Perot resonance along the length of the microbelt. By studying the low-temperature and time-resolved photoluminescence, it is verified that the corresponding lasing characteristics are attributed to the excitonic optical gain process. Furthermore, the rectangular cross-sectional nanostructure of ZnS microbelt suppresses TM polarization for excitation power lower than ∼1.4 times the threshold. Hence, ZnS microbelts can be a promising building block to realize ultraviolet semiconductor lasers with control of laser polarization.",

keywords = "Microcavities, semiconductor lasers, ZnS",

author = "H. Zhu and Su, {S. C.} and Yu, {Siu Fung} and Zhang, {W. F.} and Ling, {C. C.} and Yang, {H. Y.}",

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T1 - Ultraviolet lasing characteristics of ZnS microbelt lasers

AU - Zhu, H.

AU - Su, S. C.

AU - Yu, Siu Fung

AU - Zhang, W. F.

AU - Ling, C. C.

AU - Yang, H. Y.

PY - 2013/5/22

Y1 - 2013/5/22

N2 - Investigation on the room-temperature ultraviolet lasing characteristics of a single ZnS microbelt laser is presented. Lasing emission with peak wavelength at round 335 nm is observed from the hexagonal-wurtzite phase of ZnS microbelt under optical excitation. This is due to the Fabry-Perot resonance along the length of the microbelt. By studying the low-temperature and time-resolved photoluminescence, it is verified that the corresponding lasing characteristics are attributed to the excitonic optical gain process. Furthermore, the rectangular cross-sectional nanostructure of ZnS microbelt suppresses TM polarization for excitation power lower than ∼1.4 times the threshold. Hence, ZnS microbelts can be a promising building block to realize ultraviolet semiconductor lasers with control of laser polarization.

AB - Investigation on the room-temperature ultraviolet lasing characteristics of a single ZnS microbelt laser is presented. Lasing emission with peak wavelength at round 335 nm is observed from the hexagonal-wurtzite phase of ZnS microbelt under optical excitation. This is due to the Fabry-Perot resonance along the length of the microbelt. By studying the low-temperature and time-resolved photoluminescence, it is verified that the corresponding lasing characteristics are attributed to the excitonic optical gain process. Furthermore, the rectangular cross-sectional nanostructure of ZnS microbelt suppresses TM polarization for excitation power lower than ∼1.4 times the threshold. Hence, ZnS microbelts can be a promising building block to realize ultraviolet semiconductor lasers with control of laser polarization.

KW - Microcavities

KW - semiconductor lasers

KW - ZnS

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DO - 10.1109/JSTQE.2013.2242849

M3 - Journal article

SN - 1077-260X

VL - 19

JO - IEEE Journal on Selected Topics in Quantum Electronics

JF - IEEE Journal on Selected Topics in Quantum Electronics

IS - 4

M1 - 6449279

ER -

Ultraviolet lasing characteristics of ZnS microbelt lasers

Abstract

Keywords

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