Ultraviolet electroluminescence from randomly assembled n -SnO2 nanowires p -GaN:Mg Heterojunction

H. Y. Yang, Siu Fung Yu, H. K. Liang, Shu Ping Lau, S. S. Pramana, C. Ferraris, C. W. Cheng, H. J. Fan

Research output: Journal article publicationJournal articleAcademic researchpeer-review

43 Citations (Scopus)


Electroluminescence characteristics of a heterojunction light-emitting diode, which was fabricated by depositing a layer of randomly assembled n-SnO2 nanowires on p-GaN:Mg/sapphire substrate via vapor transport method, were investigated at room temperature. Peak wavelength emission at around 388 nm was observed for the diode under forward bias. This is mainly related to the radiative recombination of weakly bounded excitons at the shallow-trapped states of SnO2 nanowires, Under reverse bias, near bandedge emission from the p-GaN:Mg/sapphire leads to the observation of emission peak at around 370 nm.
Original languageEnglish
Pages (from-to)1191-1194
Number of pages4
JournalACS Applied Materials and Interfaces
Issue number4
Publication statusPublished - 28 Apr 2010


  • Defect state recombination
  • Light-emitting diodes
  • SnO nanowires 2
  • Ultraviolet emission

ASJC Scopus subject areas

  • General Materials Science


Dive into the research topics of 'Ultraviolet electroluminescence from randomly assembled n -SnO2 nanowires p -GaN:Mg Heterojunction'. Together they form a unique fingerprint.

Cite this