Ultraviolet electroluminescence from randomly assembled n -SnO2 nanowires p -GaN:Mg Heterojunction

H. Y. Yang; Siu Fung Yu; H. K. Liang; Shu Ping Lau; S. S. Pramana; C. Ferraris; C. W. Cheng; H. J. Fan

doi:10.1021/am1000294

Ultraviolet electroluminescence from randomly assembled n -SnO₂ nanowires p -GaN:Mg Heterojunction

H. Y. Yang, Siu Fung Yu, H. K. Liang, Shu Ping Lau, S. S. Pramana, C. Ferraris, C. W. Cheng, H. J. Fan

Research output: Journal article publication › Journal article › Academic research › peer-review

44 Citations (Scopus)

Abstract

Electroluminescence characteristics of a heterojunction light-emitting diode, which was fabricated by depositing a layer of randomly assembled n-SnO2 nanowires on p-GaN:Mg/sapphire substrate via vapor transport method, were investigated at room temperature. Peak wavelength emission at around 388 nm was observed for the diode under forward bias. This is mainly related to the radiative recombination of weakly bounded excitons at the shallow-trapped states of SnO2 nanowires, Under reverse bias, near bandedge emission from the p-GaN:Mg/sapphire leads to the observation of emission peak at around 370 nm.

Original language	English
Pages (from-to)	1191-1194
Number of pages	4
Journal	ACS Applied Materials and Interfaces
Volume	2
Issue number	4
DOIs	https://doi.org/10.1021/am1000294
Publication status	Published - 28 Apr 2010

Keywords

Defect state recombination
Light-emitting diodes
SnO nanowires 2
Ultraviolet emission

ASJC Scopus subject areas

General Materials Science

More information

10.1021/am1000294

Cite this

@article{469b0d781b0a45abb1c93641e51167e8,

title = "Ultraviolet electroluminescence from randomly assembled n -SnO2 nanowires p -GaN:Mg Heterojunction",

abstract = "Electroluminescence characteristics of a heterojunction light-emitting diode, which was fabricated by depositing a layer of randomly assembled n-SnO2 nanowires on p-GaN:Mg/sapphire substrate via vapor transport method, were investigated at room temperature. Peak wavelength emission at around 388 nm was observed for the diode under forward bias. This is mainly related to the radiative recombination of weakly bounded excitons at the shallow-trapped states of SnO2 nanowires, Under reverse bias, near bandedge emission from the p-GaN:Mg/sapphire leads to the observation of emission peak at around 370 nm.",

keywords = "Defect state recombination, Light-emitting diodes, SnO nanowires 2, Ultraviolet emission",

author = "Yang, {H. Y.} and Yu, {Siu Fung} and Liang, {H. K.} and Lau, {Shu Ping} and Pramana, {S. S.} and C. Ferraris and Cheng, {C. W.} and Fan, {H. J.}",

year = "2010",

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doi = "10.1021/am1000294",

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TY - JOUR

T1 - Ultraviolet electroluminescence from randomly assembled n -SnO2 nanowires p -GaN:Mg Heterojunction

AU - Yang, H. Y.

AU - Yu, Siu Fung

AU - Liang, H. K.

AU - Lau, Shu Ping

AU - Pramana, S. S.

AU - Ferraris, C.

AU - Cheng, C. W.

AU - Fan, H. J.

PY - 2010/4/28

Y1 - 2010/4/28

N2 - Electroluminescence characteristics of a heterojunction light-emitting diode, which was fabricated by depositing a layer of randomly assembled n-SnO2 nanowires on p-GaN:Mg/sapphire substrate via vapor transport method, were investigated at room temperature. Peak wavelength emission at around 388 nm was observed for the diode under forward bias. This is mainly related to the radiative recombination of weakly bounded excitons at the shallow-trapped states of SnO2 nanowires, Under reverse bias, near bandedge emission from the p-GaN:Mg/sapphire leads to the observation of emission peak at around 370 nm.

AB - Electroluminescence characteristics of a heterojunction light-emitting diode, which was fabricated by depositing a layer of randomly assembled n-SnO2 nanowires on p-GaN:Mg/sapphire substrate via vapor transport method, were investigated at room temperature. Peak wavelength emission at around 388 nm was observed for the diode under forward bias. This is mainly related to the radiative recombination of weakly bounded excitons at the shallow-trapped states of SnO2 nanowires, Under reverse bias, near bandedge emission from the p-GaN:Mg/sapphire leads to the observation of emission peak at around 370 nm.

KW - Defect state recombination

KW - Light-emitting diodes

KW - SnO nanowires 2

KW - Ultraviolet emission

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U2 - 10.1021/am1000294

DO - 10.1021/am1000294

M3 - Journal article

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JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

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