Ultraviolet amplified spontaneous emission from zinc oxide ridge waveguides on silicon substrate

Siu Fung Yu, Clement Yuen, Shu Ping Lau, Y. G. Wang, H. W. Lee, B. K. Tay

Research output: Journal article publicationJournal articleAcademic researchpeer-review

58 Citations (Scopus)


Device-quality ZnO thin films were deposited on lattice-mismatched silicon substrate by the FCVA technique. High intensity UV ASE was observed from the devices at room temperature. A stable fundamental TE mode was maintained inside the ridge waveguide at high pump intensity, and the corresponding maximum net optical gain was found to be 120 cm-1at 1.9 MW/cm2pump intensity. This high pump intensity indicate that the ZnO thin films on silicon substrate can withstand catastrophic optical damage at very high pump (lasing) intensities, so that they are a durable active medium to realize lasers.
Original languageEnglish
Pages (from-to)4288-4290
Number of pages3
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 24 Nov 2003
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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