Ultraviolet amplified spontaneous emission from zinc oxide ridge waveguides on silicon substrate

Siu Fung Yu; Clement Yuen; Shu Ping Lau; Y. G. Wang; H. W. Lee; B. K. Tay

doi:10.1063/1.1629784

Ultraviolet amplified spontaneous emission from zinc oxide ridge waveguides on silicon substrate

Siu Fung Yu, Clement Yuen, Shu Ping Lau, Y. G. Wang, H. W. Lee, B. K. Tay

Research output: Journal article publication › Journal article › Academic research › peer-review

60 Citations (Scopus)

Abstract

Device-quality ZnO thin films were deposited on lattice-mismatched silicon substrate by the FCVA technique. High intensity UV ASE was observed from the devices at room temperature. A stable fundamental TE mode was maintained inside the ridge waveguide at high pump intensity, and the corresponding maximum net optical gain was found to be 120 cm-1at 1.9 MW/cm2pump intensity. This high pump intensity indicate that the ZnO thin films on silicon substrate can withstand catastrophic optical damage at very high pump (lasing) intensities, so that they are a durable active medium to realize lasers.

Original language	English
Pages (from-to)	4288-4290
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	21
DOIs	https://doi.org/10.1063/1.1629784
Publication status	Published - 24 Nov 2003
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1629784

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abstract = "Device-quality ZnO thin films were deposited on lattice-mismatched silicon substrate by the FCVA technique. High intensity UV ASE was observed from the devices at room temperature. A stable fundamental TE mode was maintained inside the ridge waveguide at high pump intensity, and the corresponding maximum net optical gain was found to be 120 cm-1at 1.9 MW/cm2pump intensity. This high pump intensity indicate that the ZnO thin films on silicon substrate can withstand catastrophic optical damage at very high pump (lasing) intensities, so that they are a durable active medium to realize lasers.",

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AU - Yu, Siu Fung

AU - Yuen, Clement

AU - Lau, Shu Ping

AU - Wang, Y. G.

AU - Lee, H. W.

AU - Tay, B. K.

PY - 2003/11/24

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N2 - Device-quality ZnO thin films were deposited on lattice-mismatched silicon substrate by the FCVA technique. High intensity UV ASE was observed from the devices at room temperature. A stable fundamental TE mode was maintained inside the ridge waveguide at high pump intensity, and the corresponding maximum net optical gain was found to be 120 cm-1at 1.9 MW/cm2pump intensity. This high pump intensity indicate that the ZnO thin films on silicon substrate can withstand catastrophic optical damage at very high pump (lasing) intensities, so that they are a durable active medium to realize lasers.

AB - Device-quality ZnO thin films were deposited on lattice-mismatched silicon substrate by the FCVA technique. High intensity UV ASE was observed from the devices at room temperature. A stable fundamental TE mode was maintained inside the ridge waveguide at high pump intensity, and the corresponding maximum net optical gain was found to be 120 cm-1at 1.9 MW/cm2pump intensity. This high pump intensity indicate that the ZnO thin films on silicon substrate can withstand catastrophic optical damage at very high pump (lasing) intensities, so that they are a durable active medium to realize lasers.

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JF - Applied Physics Letters

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Ultraviolet amplified spontaneous emission from zinc oxide ridge waveguides on silicon substrate

Abstract

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