Ultrasensitive broadband photodetectors based on two-dimensional Bi2O2Te films

Pin Tian, Hongbo Wu, Libin Tang, Jinzhong Xiang, Rongbin Ji, Shu Ping Lau, Kar Seng Teng, Wei Guo, Yugui Yao, Lain Jong Li

Research output: Journal article publicationJournal articleAcademic researchpeer-review

16 Citations (Scopus)


Two-dimensional (2D) materials exhibit many unique optical and electronic properties that are highly desirable for application in optoelectronics. Here, we report the study of a photodetector based on 2D Bi2O2Te grown on ann-Si substrate. The 2D Bi2O2Te material was transformed from a sputtered Bi2Te3ultrathin film after rapid annealing at 400 °C for 10 min under an air atmosphere. The photodetector was capable of detecting a broad wavelength ranging from 210 nm to 2.4 μm with an excellent responsivity of up to 3 × 105and 2 × 104AW−1and a detectivity of 4 × 1015and 2 × 1014Jones for deep ultraviolet (UV) and short-wave infrared (SWIR) under weak light illumination, respectively. The effectiveness of 2D materials in weak light detection was investigated by the analysis of the photocurrent density contribution. Importantly, the facile growth process at low annealing temperatures would allow the direct large-scale integration of 2D Bi2O2Te materials with the complementary metal-oxide-semiconductor (CMOS) technology.

Original languageEnglish
Pages (from-to)13713-13721
Number of pages9
JournalJournal of Materials Chemistry C
Issue number39
Publication statusPublished - 21 Oct 2021

ASJC Scopus subject areas

  • General Chemistry
  • Materials Chemistry


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