Ultrafast Growth of High-Quality Monolayer WSe2 on Au

Y. Gao, Y. L. Hong, L. C. Yin, Z. Wu, Z. Yang, M. L. Chen, Z. Liu, T. Ma, D. M. Sun, Zhenhua Ni, X. L. Ma, H. M. Cheng, W. Ren

Research output: Journal article publicationJournal articleAcademic researchpeer-review

Abstract

The ultrafast growth of high-quality uniform monolayer WSe2 is reported with a growth rate of approximately 26 microm s(-1) by chemical vapor deposition on reusable Au substrate, which is approximately 2-3 orders of magnitude faster than those of most 2D transition metal dichalcogenides grown on nonmetal substrates. Such ultrafast growth allows for the fabrication of millimeter-size single-crystal WSe2 domains in approximately 30 s and large-area continuous films in approximately 60 s. Importantly, the ultrafast grown WSe2 shows excellent crystal quality and extraordinary electrical performance comparable to those of the mechanically exfoliated samples, with a high mobility up to approximately 143 cm(2) V(-1) s(-1) and ON/OFF ratio up to 9 x 10(6) at room temperature. Density functional theory calculations reveal that the ultrafast growth of WSe2 is due to the small energy barriers and exothermic characteristic for the diffusion and attachment of W and Se on the edges of WSe2 on Au substrate.
Original languageEnglish
JournalAdvanced Materials
Volume29
Issue number29
DOIs
Publication statusPublished - Jun 2017

Keywords

  • WSe2 chemical vapor deposition, monolayers ultrafast growth

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