Ultrabroadband near-infrared luminescence and efficient energy transfer in Bi and Bi/Ho co-doped thin films

Beibei Xu; Jianhua Hao; Qiangbing Guo; Juechen Wang; Gongxun Bai; Bin Fei; Shifeng Zhou; Jianrong Qiu

doi:10.1039/c3tc32177k

Ultrabroadband near-infrared luminescence and efficient energy transfer in Bi and Bi/Ho co-doped thin films

Beibei Xu, Jianhua Hao, Qiangbing Guo, Juechen Wang, Gongxun Bai, Bin Fei, Shifeng Zhou, Jianrong Qiu

Research output: Journal article publication › Journal article › Academic research › peer-review

28 Citations (Scopus)

Abstract

Ultrabroadband near-infrared luminescence in the 1.0-2.4 μm range has been observed in bismuth (Bi)-doped oxyfluoride germanate thin films prepared by pulsed laser deposition (PLD). The emission peak position shows a red-shift with decreasing oxygen pressure during PLD growth. Systematic investigation reveals that the origin of the luminescence could be ascribed to Bi clusters. With the sensitization of Bi near-infrared active centers, enhanced broadband ∼2 μm luminescence of Ho3+ is realized in Bi/Ho co-doped films, and a high energy transfer efficiency is obtained. These results may provide promise to realize planar waveguide lasers in the near-infrared region for integrated optics.

Original language	English
Pages (from-to)	2482-2487
Number of pages	6
Journal	Journal of Materials Chemistry C
Volume	2
Issue number	14
DOIs	https://doi.org/10.1039/c3tc32177k
Publication status	Published - 14 Apr 2014

ASJC Scopus subject areas

General Chemistry
Materials Chemistry

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10.1039/c3tc32177k

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@article{ac00a52a9ded4b66a5f64dfe842ebefa,

title = "Ultrabroadband near-infrared luminescence and efficient energy transfer in Bi and Bi/Ho co-doped thin films",

abstract = "Ultrabroadband near-infrared luminescence in the 1.0-2.4 μm range has been observed in bismuth (Bi)-doped oxyfluoride germanate thin films prepared by pulsed laser deposition (PLD). The emission peak position shows a red-shift with decreasing oxygen pressure during PLD growth. Systematic investigation reveals that the origin of the luminescence could be ascribed to Bi clusters. With the sensitization of Bi near-infrared active centers, enhanced broadband ∼2 μm luminescence of Ho3+ is realized in Bi/Ho co-doped films, and a high energy transfer efficiency is obtained. These results may provide promise to realize planar waveguide lasers in the near-infrared region for integrated optics.",

author = "Beibei Xu and Jianhua Hao and Qiangbing Guo and Juechen Wang and Gongxun Bai and Bin Fei and Shifeng Zhou and Jianrong Qiu",

year = "2014",

month = apr,

day = "14",

doi = "10.1039/c3tc32177k",

language = "English",

volume = "2",

pages = "2482--2487",

journal = "Journal of Materials Chemistry C",

issn = "2050-7534",

publisher = "Royal Society of Chemistry",

number = "14",

}

TY - JOUR

T1 - Ultrabroadband near-infrared luminescence and efficient energy transfer in Bi and Bi/Ho co-doped thin films

AU - Xu, Beibei

AU - Hao, Jianhua

AU - Guo, Qiangbing

AU - Wang, Juechen

AU - Bai, Gongxun

AU - Fei, Bin

AU - Zhou, Shifeng

AU - Qiu, Jianrong

PY - 2014/4/14

Y1 - 2014/4/14

N2 - Ultrabroadband near-infrared luminescence in the 1.0-2.4 μm range has been observed in bismuth (Bi)-doped oxyfluoride germanate thin films prepared by pulsed laser deposition (PLD). The emission peak position shows a red-shift with decreasing oxygen pressure during PLD growth. Systematic investigation reveals that the origin of the luminescence could be ascribed to Bi clusters. With the sensitization of Bi near-infrared active centers, enhanced broadband ∼2 μm luminescence of Ho3+ is realized in Bi/Ho co-doped films, and a high energy transfer efficiency is obtained. These results may provide promise to realize planar waveguide lasers in the near-infrared region for integrated optics.

AB - Ultrabroadband near-infrared luminescence in the 1.0-2.4 μm range has been observed in bismuth (Bi)-doped oxyfluoride germanate thin films prepared by pulsed laser deposition (PLD). The emission peak position shows a red-shift with decreasing oxygen pressure during PLD growth. Systematic investigation reveals that the origin of the luminescence could be ascribed to Bi clusters. With the sensitization of Bi near-infrared active centers, enhanced broadband ∼2 μm luminescence of Ho3+ is realized in Bi/Ho co-doped films, and a high energy transfer efficiency is obtained. These results may provide promise to realize planar waveguide lasers in the near-infrared region for integrated optics.

UR - http://www.scopus.com/inward/record.url?scp=84896331932&partnerID=8YFLogxK

U2 - 10.1039/c3tc32177k

DO - 10.1039/c3tc32177k

M3 - Journal article

SN - 2050-7534

VL - 2

SP - 2482

EP - 2487

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 14

ER -

Ultrabroadband near-infrared luminescence and efficient energy transfer in Bi and Bi/Ho co-doped thin films

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