Ultrabroadband near-infrared luminescence and efficient energy transfer in Bi and Bi/Ho co-doped thin films

Beibei Xu, Jianhua Hao, Qiangbing Guo, Juechen Wang, Gongxun Bai, Bin Fei, Shifeng Zhou, Jianrong Qiu

Research output: Journal article publicationJournal articleAcademic researchpeer-review

25 Citations (Scopus)


Ultrabroadband near-infrared luminescence in the 1.0-2.4 μm range has been observed in bismuth (Bi)-doped oxyfluoride germanate thin films prepared by pulsed laser deposition (PLD). The emission peak position shows a red-shift with decreasing oxygen pressure during PLD growth. Systematic investigation reveals that the origin of the luminescence could be ascribed to Bi clusters. With the sensitization of Bi near-infrared active centers, enhanced broadband ∼2 μm luminescence of Ho3+ is realized in Bi/Ho co-doped films, and a high energy transfer efficiency is obtained. These results may provide promise to realize planar waveguide lasers in the near-infrared region for integrated optics.
Original languageEnglish
Pages (from-to)2482-2487
Number of pages6
JournalJournal of Materials Chemistry C
Issue number14
Publication statusPublished - 14 Apr 2014

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

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