Ultra-wideband bismuth-based EDFA for DWDM systems

Bai Ou Guan, Hwa Yaw Tam, Shun Yee Liu, Ping Kong Alexander Wai, N. Sugimoto

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

9 Citations (Scopus)

Abstract

The ultra-wideband DWDM amplification of the lanthanum co-doped bismuth-based erbium-doped fiber (Bi-EDF) amplifier is demonstrated. Over 20 dB of signal gain and NF less than 6.7 dB was achieved for the 50 GHz spacing DWDM signal spreading over 58 nm wavelength range from 1554 nm to 1612 nm, by employing 253 cm long Bi-EDF pumped with 1480 nm laser. The gain remained 18.2 dB at 1616 nm, and 15.7 dB at 1620 nm. The NF at 1620 nm was only 6.6 dB.
Original languageEnglish
Title of host publicationProceedings of the 6th Chinese Optoelectronics Symposium, COES 2003
PublisherIEEE
Pages147-149
Number of pages3
ISBN (Electronic)0780378873, 9780780378872
DOIs
Publication statusPublished - 1 Jan 2003
Event6th Chinese Optoelectronics Symposium, COES 2003 - Hong Kong University of Science and Technology, Hong Kong, Hong Kong
Duration: 12 Sep 200314 Sep 2003

Conference

Conference6th Chinese Optoelectronics Symposium, COES 2003
CountryHong Kong
CityHong Kong
Period12/09/0314/09/03

Keywords

  • Erbium
  • Erbium-doped fiber amplifier
  • Light sources
  • Noise measurement
  • Optical fiber communication
  • Optical fiber devices
  • Pump lasers
  • Silicon compounds
  • Ultra wideband technology
  • Wavelength division multiplexing

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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