Ultra-low voltage resistive switching of HfO2buffered (001) epitaxial NiO films deposited on metal seed layers

X. Y. Qiu; R. X. Wang; Z. Zhang; M. L. Wei; H. Ji; Yang Chai; F. C. Zhou; Jiyan Dai; T. Zhang; L. T. Li; X. S. Meng

doi:10.1063/1.4990089

Ultra-low voltage resistive switching of HfO₂buffered (001) epitaxial NiO films deposited on metal seed layers

X. Y. Qiu
, R. X. Wang
, Z. Zhang
, M. L. Wei
, H. Ji
, Yang Chai
, F. C. Zhou
, Jiyan Dai
, T. Zhang
, L. T. Li
, X. S. Meng

Research output: Journal article publication › Journal article › Academic research › peer-review

10 Citations (Scopus)

Abstract

A set of (001) epitaxial NiO films were prepared on highly textured (001) Pt seed layers using magnetron sputtering, and their resistive switching performance was measured. Cube-to-cube epitaxial relationships of NiO(001)//Pt(001) and NiO[001]//Pt[001] were demonstrated. Current-voltage measurements revealed that the Ag/(001)NiO/(001)Pt capacitor structures exhibited stable bipolar switching behavior with an ON/OFF ratio of 20 and an endurance of over 5 × 103cycles. Furthermore, inserting a HfO2buffer layer between the NiO film and the Ag top electrode increased the ON/OFF ratio to more than 103and reduced the SET/RESET voltage to below ±0.2 V. These enhancements are attributed to the differing filament growth mechanisms that occur in the NiO and HfO2layers. The present work suggests that Ag/HfO2/(001)NiO/(001)Pt capacitor structures are a promising technology for next-generation, ultra-low voltage resistive switching memory.

Original language	English
Article number	142103
Journal	Applied Physics Letters
Volume	111
Issue number	14
DOIs	https://doi.org/10.1063/1.4990089
Publication status	Published - 2 Oct 2017

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4990089

http://hdl.handle.net/10397/74721

Cite this

@article{ffc5f13984f7489d9f993138750f2aaa,

title = "Ultra-low voltage resistive switching of HfO2buffered (001) epitaxial NiO films deposited on metal seed layers",

abstract = "A set of (001) epitaxial NiO films were prepared on highly textured (001) Pt seed layers using magnetron sputtering, and their resistive switching performance was measured. Cube-to-cube epitaxial relationships of NiO(001)//Pt(001) and NiO[001]//Pt[001] were demonstrated. Current-voltage measurements revealed that the Ag/(001)NiO/(001)Pt capacitor structures exhibited stable bipolar switching behavior with an ON/OFF ratio of 20 and an endurance of over 5 × 103cycles. Furthermore, inserting a HfO2buffer layer between the NiO film and the Ag top electrode increased the ON/OFF ratio to more than 103and reduced the SET/RESET voltage to below ±0.2 V. These enhancements are attributed to the differing filament growth mechanisms that occur in the NiO and HfO2layers. The present work suggests that Ag/HfO2/(001)NiO/(001)Pt capacitor structures are a promising technology for next-generation, ultra-low voltage resistive switching memory.",

author = "Qiu, \{X. Y.\} and Wang, \{R. X.\} and Z. Zhang and Wei, \{M. L.\} and H. Ji and Yang Chai and Zhou, \{F. C.\} and Jiyan Dai and T. Zhang and Li, \{L. T.\} and Meng, \{X. S.\}",

year = "2017",

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doi = "10.1063/1.4990089",

language = "English",

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T1 - Ultra-low voltage resistive switching of HfO2buffered (001) epitaxial NiO films deposited on metal seed layers

AU - Qiu, X. Y.

AU - Wang, R. X.

AU - Zhang, Z.

AU - Wei, M. L.

AU - Ji, H.

AU - Chai, Yang

AU - Zhou, F. C.

AU - Dai, Jiyan

AU - Zhang, T.

AU - Li, L. T.

AU - Meng, X. S.

PY - 2017/10/2

Y1 - 2017/10/2

N2 - A set of (001) epitaxial NiO films were prepared on highly textured (001) Pt seed layers using magnetron sputtering, and their resistive switching performance was measured. Cube-to-cube epitaxial relationships of NiO(001)//Pt(001) and NiO[001]//Pt[001] were demonstrated. Current-voltage measurements revealed that the Ag/(001)NiO/(001)Pt capacitor structures exhibited stable bipolar switching behavior with an ON/OFF ratio of 20 and an endurance of over 5 × 103cycles. Furthermore, inserting a HfO2buffer layer between the NiO film and the Ag top electrode increased the ON/OFF ratio to more than 103and reduced the SET/RESET voltage to below ±0.2 V. These enhancements are attributed to the differing filament growth mechanisms that occur in the NiO and HfO2layers. The present work suggests that Ag/HfO2/(001)NiO/(001)Pt capacitor structures are a promising technology for next-generation, ultra-low voltage resistive switching memory.

AB - A set of (001) epitaxial NiO films were prepared on highly textured (001) Pt seed layers using magnetron sputtering, and their resistive switching performance was measured. Cube-to-cube epitaxial relationships of NiO(001)//Pt(001) and NiO[001]//Pt[001] were demonstrated. Current-voltage measurements revealed that the Ag/(001)NiO/(001)Pt capacitor structures exhibited stable bipolar switching behavior with an ON/OFF ratio of 20 and an endurance of over 5 × 103cycles. Furthermore, inserting a HfO2buffer layer between the NiO film and the Ag top electrode increased the ON/OFF ratio to more than 103and reduced the SET/RESET voltage to below ±0.2 V. These enhancements are attributed to the differing filament growth mechanisms that occur in the NiO and HfO2layers. The present work suggests that Ag/HfO2/(001)NiO/(001)Pt capacitor structures are a promising technology for next-generation, ultra-low voltage resistive switching memory.

UR - https://www.scopus.com/pages/publications/85031741616

U2 - 10.1063/1.4990089

DO - 10.1063/1.4990089

M3 - Journal article

SN - 0003-6951

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 142103

ER -

Ultra-low voltage resistive switching of HfO₂buffered (001) epitaxial NiO films deposited on metal seed layers

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