Ultra-low voltage resistive switching of HfO2buffered (001) epitaxial NiO films deposited on metal seed layers

X. Y. Qiu, R. X. Wang, Z. Zhang, M. L. Wei, H. Ji, Yang Chai, F. C. Zhou, Jiyan Dai, T. Zhang, L. T. Li, X. S. Meng

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A set of (001) epitaxial NiO films were prepared on highly textured (001) Pt seed layers using magnetron sputtering, and their resistive switching performance was measured. Cube-to-cube epitaxial relationships of NiO(001)//Pt(001) and NiO[001]//Pt[001] were demonstrated. Current-voltage measurements revealed that the Ag/(001)NiO/(001)Pt capacitor structures exhibited stable bipolar switching behavior with an ON/OFF ratio of 20 and an endurance of over 5 × 103cycles. Furthermore, inserting a HfO2buffer layer between the NiO film and the Ag top electrode increased the ON/OFF ratio to more than 103and reduced the SET/RESET voltage to below ±0.2 V. These enhancements are attributed to the differing filament growth mechanisms that occur in the NiO and HfO2layers. The present work suggests that Ag/HfO2/(001)NiO/(001)Pt capacitor structures are a promising technology for next-generation, ultra-low voltage resistive switching memory.
Original languageEnglish
Article number142103
JournalApplied Physics Letters
Issue number14
Publication statusPublished - 2 Oct 2017

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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