A set of (001) epitaxial NiO films were prepared on highly textured (001) Pt seed layers using magnetron sputtering, and their resistive switching performance was measured. Cube-to-cube epitaxial relationships of NiO(001)//Pt(001) and NiO//Pt were demonstrated. Current-voltage measurements revealed that the Ag/(001)NiO/(001)Pt capacitor structures exhibited stable bipolar switching behavior with an ON/OFF ratio of 20 and an endurance of over 5 × 103cycles. Furthermore, inserting a HfO2buffer layer between the NiO film and the Ag top electrode increased the ON/OFF ratio to more than 103and reduced the SET/RESET voltage to below ±0.2 V. These enhancements are attributed to the differing filament growth mechanisms that occur in the NiO and HfO2layers. The present work suggests that Ag/HfO2/(001)NiO/(001)Pt capacitor structures are a promising technology for next-generation, ultra-low voltage resistive switching memory.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)