Ultra-low voltage resistive switching of HfO2buffered (001) epitaxial NiO films deposited on metal seed layers

X. Y. Qiu; R. X. Wang; Z. Zhang; M. L. Wei; H. Ji; Yang Chai; F. C. Zhou; Jiyan Dai; T. Zhang; L. T. Li; X. S. Meng

doi:10.1063/1.4990089

Ultra-low voltage resistive switching of HfO₂buffered (001) epitaxial NiO films deposited on metal seed layers

X. Y. Qiu, R. X. Wang, Z. Zhang, M. L. Wei, H. Ji, Yang Chai, F. C. Zhou, Jiyan Dai, T. Zhang, L. T. Li, X. S. Meng

Research output: Journal article publication › Journal article › Academic research › peer-review

10 Citations (Scopus)

Abstract

A set of (001) epitaxial NiO films were prepared on highly textured (001) Pt seed layers using magnetron sputtering, and their resistive switching performance was measured. Cube-to-cube epitaxial relationships of NiO(001)//Pt(001) and NiO[001]//Pt[001] were demonstrated. Current-voltage measurements revealed that the Ag/(001)NiO/(001)Pt capacitor structures exhibited stable bipolar switching behavior with an ON/OFF ratio of 20 and an endurance of over 5 × 103cycles. Furthermore, inserting a HfO2buffer layer between the NiO film and the Ag top electrode increased the ON/OFF ratio to more than 103and reduced the SET/RESET voltage to below ±0.2 V. These enhancements are attributed to the differing filament growth mechanisms that occur in the NiO and HfO2layers. The present work suggests that Ag/HfO2/(001)NiO/(001)Pt capacitor structures are a promising technology for next-generation, ultra-low voltage resistive switching memory.

Original language	English
Article number	142103
Journal	Applied Physics Letters
Volume	111
Issue number	14
DOIs	https://doi.org/10.1063/1.4990089
Publication status	Published - 2 Oct 2017

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4990089

http://hdl.handle.net/10397/74721

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title = "Ultra-low voltage resistive switching of HfO2buffered (001) epitaxial NiO films deposited on metal seed layers",

abstract = "A set of (001) epitaxial NiO films were prepared on highly textured (001) Pt seed layers using magnetron sputtering, and their resistive switching performance was measured. Cube-to-cube epitaxial relationships of NiO(001)//Pt(001) and NiO[001]//Pt[001] were demonstrated. Current-voltage measurements revealed that the Ag/(001)NiO/(001)Pt capacitor structures exhibited stable bipolar switching behavior with an ON/OFF ratio of 20 and an endurance of over 5 × 103cycles. Furthermore, inserting a HfO2buffer layer between the NiO film and the Ag top electrode increased the ON/OFF ratio to more than 103and reduced the SET/RESET voltage to below ±0.2 V. These enhancements are attributed to the differing filament growth mechanisms that occur in the NiO and HfO2layers. The present work suggests that Ag/HfO2/(001)NiO/(001)Pt capacitor structures are a promising technology for next-generation, ultra-low voltage resistive switching memory.",

author = "Qiu, {X. Y.} and Wang, {R. X.} and Z. Zhang and Wei, {M. L.} and H. Ji and Yang Chai and Zhou, {F. C.} and Jiyan Dai and T. Zhang and Li, {L. T.} and Meng, {X. S.}",

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T1 - Ultra-low voltage resistive switching of HfO2buffered (001) epitaxial NiO films deposited on metal seed layers

AU - Qiu, X. Y.

AU - Wang, R. X.

AU - Zhang, Z.

AU - Wei, M. L.

AU - Ji, H.

AU - Chai, Yang

AU - Zhou, F. C.

AU - Dai, Jiyan

AU - Zhang, T.

AU - Li, L. T.

AU - Meng, X. S.

PY - 2017/10/2

Y1 - 2017/10/2

N2 - A set of (001) epitaxial NiO films were prepared on highly textured (001) Pt seed layers using magnetron sputtering, and their resistive switching performance was measured. Cube-to-cube epitaxial relationships of NiO(001)//Pt(001) and NiO[001]//Pt[001] were demonstrated. Current-voltage measurements revealed that the Ag/(001)NiO/(001)Pt capacitor structures exhibited stable bipolar switching behavior with an ON/OFF ratio of 20 and an endurance of over 5 × 103cycles. Furthermore, inserting a HfO2buffer layer between the NiO film and the Ag top electrode increased the ON/OFF ratio to more than 103and reduced the SET/RESET voltage to below ±0.2 V. These enhancements are attributed to the differing filament growth mechanisms that occur in the NiO and HfO2layers. The present work suggests that Ag/HfO2/(001)NiO/(001)Pt capacitor structures are a promising technology for next-generation, ultra-low voltage resistive switching memory.

AB - A set of (001) epitaxial NiO films were prepared on highly textured (001) Pt seed layers using magnetron sputtering, and their resistive switching performance was measured. Cube-to-cube epitaxial relationships of NiO(001)//Pt(001) and NiO[001]//Pt[001] were demonstrated. Current-voltage measurements revealed that the Ag/(001)NiO/(001)Pt capacitor structures exhibited stable bipolar switching behavior with an ON/OFF ratio of 20 and an endurance of over 5 × 103cycles. Furthermore, inserting a HfO2buffer layer between the NiO film and the Ag top electrode increased the ON/OFF ratio to more than 103and reduced the SET/RESET voltage to below ±0.2 V. These enhancements are attributed to the differing filament growth mechanisms that occur in the NiO and HfO2layers. The present work suggests that Ag/HfO2/(001)NiO/(001)Pt capacitor structures are a promising technology for next-generation, ultra-low voltage resistive switching memory.

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DO - 10.1063/1.4990089

M3 - Journal article

SN - 0003-6951

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 142103

ER -

Ultra-low voltage resistive switching of HfO₂buffered (001) epitaxial NiO films deposited on metal seed layers

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