Ultra-broadband infrared luminescence of Bi-doped thin-films for integrated optics

Beibei Xu, Jianhua Hao, Shifeng Zhou, Jianrong Qiu

Research output: Journal article publicationJournal articleAcademic researchpeer-review

9 Citations (Scopus)


Ultra-broadband infrared luminescence has been observed in bismuth (Bi)-doped germanate thin-films prepared by pulsed laser deposition. The films are compatible with various types of substrates, including conventional dielectrics (LaAlO3, silica) and semiconductors (Si, GaAs). The emission peak position of the films can be finely tuned by changing oxygen partial pressure during the deposition, while the excitation wavelength locates from ultra-violet to near-infrared regions. The physical mechanism behind the observed infrared luminescence of the Bi-doped films, differing from that of the as-made glass, is discussed.
Original languageEnglish
Pages (from-to)18532-18537
Number of pages6
JournalOptics Express
Issue number15
Publication statusPublished - 29 Jul 2013

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Medicine(all)


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