Two-step interfacial reaction of HfO2 high-k gate dielectric thin films on Si

P. F. Lee, Jiyan Dai, H. L W Chan, C. L. Choy

Research output: Journal article publicationConference articleAcademic researchpeer-review

19 Citations (Scopus)

Abstract

HfO2thin films have been deposited on p-type (100) Si substrates by pulsed laser deposition. Transmission electron microscopy observation illustrated that the HfO2films are in polycrystalline structure and the interface with Si substrate is free from amorphous layer. The rough feature of the film/Si interface suggested interfacial reaction and diffusion. Depth profile X-ray photoelectron spectroscopy (XPS) analysis results revealed the formation of Hf silicate and Hf silicide at the interface. A two-step reaction model was proposed to interpret the interfacial reaction. At initial stage of film growth, insufficient oxidation of Hf atoms on bare Si surface resulted in reaction of Hf with Si leading to silicidation of Hf, at least Hf-Si bonds formation. During the following film growth, the preformed Hf silicide was further oxidized leading to Hf silicate formation. This two-step reaction model suggests a gradient distribution of the film stack, that is, HfO2/Hf silicate/Hf silicide/Si. It was found that with sufficient oxygen during film growth, the Hf silicide formation was suppressed.
Original languageEnglish
Pages (from-to)1267-1270
Number of pages4
JournalCeramics International
Volume30
Issue number7
DOIs
Publication statusPublished - 7 Sep 2004
Event3rd Asian Meeting on Electroceramics - Singapore, Singapore
Duration: 7 Dec 200311 Dec 2003

Keywords

  • A. Films
  • B. Interfaces
  • C. Dielectric properties
  • HfO 2

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this