Keyphrases
Field-effect Transistors
100%
Ultrathin
100%
Black Phosphorus
100%
Tunable Schottky Barrier
100%
Polymer Capping
100%
Poly(methyl methacrylate)
45%
Semiconductors
27%
Schottky Barrier
18%
Further Development
9%
Diode
9%
P-n Diode
9%
Negative Shift
9%
Device Application
9%
Contact Resistance
9%
Gate Voltage
9%
Electron Injection
9%
Electron Beam Irradiation
9%
On-off Ratio
9%
Hole Conduction
9%
Neutral Point
9%
Rectification Factor
9%
Chemical Passivation
9%
Metal-semiconductor Contact
9%
Engineering
Field-Effect Transistor
100%
Schottky Barrier
100%
Passivation
33%
Gate Voltage
33%
Electron Injection
33%
Neutral Point
33%
Rectification
33%
Electron Beam Irradiation
33%
Chemistry
Field Effect
100%
Schottky Contact
100%
Phosphorus
100%
Methacrylate
45%
Chemical Passivation
9%
Electron Beam
9%
Contact Resistance
9%
Material Science
Field Effect Transistors
100%
Schottky Barrier
100%
Contact Resistance
33%
Electron Beam Irradiation
33%
Physics
Black Phosphorus
100%
Field Effect Transistor
100%
Electron Beam
9%
Rectification
9%
Chemical Engineering
Polymethyl Methacrylate
100%