Tunable Magnetoresistance and Charge Carrier Density in Cr:In2 O3/PbMg1/3Nb2/3 O3-PbTi O3 Ferroelectric Field-Effect Devices

Meng Xu, Ting Wei Chen, Jian Min Yan, Lei Guo, Hui Wang, Guan Yin Gao, Hao Su Luo, Yang Chai, Ren Kui Zheng

Research output: Journal article publicationJournal articleAcademic researchpeer-review


We report the epitaxial growth of the Cr-doped In2-xCrxO3 (x = 0.05) (Cr:In2O3) semiconducting thin films on perovskite-type (111)-oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) ferroelectric single-crystal substrates in the form of ferroelectric field-effect devices that allow us to obtain an in situ tuning of the electron carrier density and magnetoresistance (MR) as well as the resistance in a reversible and nonvolatile manner, thereby stringently disclosing the relationship between the MR and the electron carrier density. Specifically, for the thinnest 25-nm Cr:In2O3 film the polarization switching of the PMN-PT from the positively polarized Pr+ state to the negatively polarized Pr-state results in a large increase in the resistance and MR. Particularly, at T = 10 K, the polarization switching induces reversible and nonvolatile changes in the magnitude and sign of MR, demonstrating strong coupling between the MR and the electron carrier density. Moreover, regardless of the polarization states of PMN-PT, MR for films with different thicknesses can be quite well described by a combination of the two-band model and the semiempirical model proposed by Khosla and Fischer based on which the positive MR (PMR) and negative MR (NMR) could be disentangled into positive component [MR(+)] and negative component [MR(-)], respectively. We find that the polarization-switching-induced large decrease in the PMR and the change in the sign of MR from positive to negative is mainly due to the rapid decrease in the MR(+), demonstrating that the coupling between MR(+) and electron carrier density plays a dominant role in controlling the magnitude and sign of MR.

Original languageEnglish
Article number064006
JournalPhysical Review Applied
Issue number6
Publication statusPublished - Jun 2020

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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