Tunable luminous color of LEDs achieved through integrating reliable multilevel RRAM

We developed a color-modulated light-emitting device (LED) by the integration of a p-GaN/n-ZnO heterojunction with reliable resistive random access memory (RRAM) and demonstrated a multi-function integrated device with the adjustable electroluminescence (EL) color by modulating the injection current according to the multiple resistance states. As a critical foundation of an integrated device, reliable operation was achieved by introducing an AlO_x layer into HfO_x RRAM as an adjustment of the resistive switching endurance. Eventually, the EL color of LED was effectively regulated by modulating the compliance current of RRAM. Thanks to the high uniformity, this modulated LED may be a promising candidate for the application of low-cost and high-density LED displays without complicated structures and techniques, and it can provide a feasible approach for the realization of multilevel resistance state feedback from varied EL color in the future.