Tunable external-cavity laser using MEMS technology

X. M. Zhang; A. Q. Liu; D. Y. Tang; Chao Lu; J. Z. Hao; A. Asundi

doi:10.1109/SENSOR.2003.1217062

Tunable external-cavity laser using MEMS technology

X. M. Zhang
, A. Q. Liu
, D. Y. Tang
, Chao Lu
, J. Z. Hao
, A. Asundi

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

1 Citation (Scopus)

Abstract

This paper reports a tunable external-cavity diode laser using a MEMS curved mirror fabricated on a silicon-on-insulator (SOI) wafer. In addition to the many advantages coming with the MEMS technology, this laser has the benefits of low alignment requirement, easy integration/packaging and potentially large wavelength tuning range. It has a size of 1.5 mmx1 mm (not including the optical fiber), and obtains a wavelength tuning range of 10.6 nm. The output power is about 5 mW at 40 mA injection current (Ith= 26 mA).

Original language	English
Title of host publication	TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers
Publisher	IEEE
Pages	1502-1505
Number of pages	4
Volume	2
ISBN (Electronic)	0780377311, 9780780377318
DOIs	https://doi.org/10.1109/SENSOR.2003.1217062
Publication status	Published - 1 Jan 2003
Externally published	Yes
Event	12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers - Boston, United States Duration: 8 Jun 2003 → 12 Jun 2003

Conference

Conference	12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers
Country/Territory	United States
City	Boston
Period	8/06/03 → 12/06/03

Keywords

Diode lasers
Fiber lasers
Laser tuning
Micromechanical devices
Mirrors
Optical fibers
Optical tuning
Packaging
Silicon on insulator technology
Tunable circuits and devices

ASJC Scopus subject areas

Electrical and Electronic Engineering

More information

10.1109/SENSOR.2003.1217062

Cite this

@inproceedings{e032b17a7bbc42eeb77619146e2c6a94,

title = "Tunable external-cavity laser using MEMS technology",

abstract = "This paper reports a tunable external-cavity diode laser using a MEMS curved mirror fabricated on a silicon-on-insulator (SOI) wafer. In addition to the many advantages coming with the MEMS technology, this laser has the benefits of low alignment requirement, easy integration/packaging and potentially large wavelength tuning range. It has a size of 1.5 mmx1 mm (not including the optical fiber), and obtains a wavelength tuning range of 10.6 nm. The output power is about 5 mW at 40 mA injection current (Ith= 26 mA).",

keywords = "Diode lasers, Fiber lasers, Laser tuning, Micromechanical devices, Mirrors, Optical fibers, Optical tuning, Packaging, Silicon on insulator technology, Tunable circuits and devices",

author = "Zhang, \{X. M.\} and Liu, \{A. Q.\} and Tang, \{D. Y.\} and Chao Lu and Hao, \{J. Z.\} and A. Asundi",

year = "2003",

month = jan,

day = "1",

doi = "10.1109/SENSOR.2003.1217062",

language = "English",

volume = "2",

pages = "1502--1505",

booktitle = "TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers",

publisher = "IEEE",

address = "United States",

note = "12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers ; Conference date: 08-06-2003 Through 12-06-2003",

}

Zhang, XM, Liu, AQ, Tang, DY, Lu, C, Hao, JZ & Asundi, A 2003, Tunable external-cavity laser using MEMS technology. in TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers. vol. 2, 1217062, IEEE, pp. 1502-1505, 12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers, Boston, United States, 8/06/03. https://doi.org/10.1109/SENSOR.2003.1217062

Tunable external-cavity laser using MEMS technology. / Zhang, X. M.; Liu, A. Q.; Tang, D. Y. et al.
TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers. Vol. 2 IEEE, 2003. p. 1502-1505 1217062.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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AU - Liu, A. Q.

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AU - Lu, Chao

AU - Hao, J. Z.

AU - Asundi, A.

PY - 2003/1/1

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AB - This paper reports a tunable external-cavity diode laser using a MEMS curved mirror fabricated on a silicon-on-insulator (SOI) wafer. In addition to the many advantages coming with the MEMS technology, this laser has the benefits of low alignment requirement, easy integration/packaging and potentially large wavelength tuning range. It has a size of 1.5 mmx1 mm (not including the optical fiber), and obtains a wavelength tuning range of 10.6 nm. The output power is about 5 mW at 40 mA injection current (Ith= 26 mA).

KW - Diode lasers

KW - Fiber lasers

KW - Laser tuning

KW - Micromechanical devices

KW - Mirrors

KW - Optical fibers

KW - Optical tuning

KW - Packaging

KW - Silicon on insulator technology

KW - Tunable circuits and devices

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DO - 10.1109/SENSOR.2003.1217062

M3 - Conference article published in proceeding or book

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BT - TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers

PB - IEEE

T2 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers

Y2 - 8 June 2003 through 12 June 2003

ER -

Tunable external-cavity laser using MEMS technology

Abstract

Conference

Keywords

ASJC Scopus subject areas

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