Abstract
This paper reports a tunable external-cavity diode laser using a MEMS curved mirror fabricated on a silicon-on-insulator (SOI) wafer. In addition to the many advantages coming with the MEMS technology, this laser has the benefits of low alignment requirement, easy integration/packaging and potentially large wavelength tuning range. It has a size of 1.5 mmx1 mm (not including the optical fiber), and obtains a wavelength tuning range of 10.6 nm. The output power is about 5 mW at 40 mA injection current (Ith= 26 mA).
Original language | English |
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Title of host publication | TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers |
Publisher | IEEE |
Pages | 1502-1505 |
Number of pages | 4 |
Volume | 2 |
ISBN (Electronic) | 0780377311, 9780780377318 |
DOIs | |
Publication status | Published - 1 Jan 2003 |
Externally published | Yes |
Event | 12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers - Boston, United States Duration: 8 Jun 2003 → 12 Jun 2003 |
Conference
Conference | 12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers |
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Country/Territory | United States |
City | Boston |
Period | 8/06/03 → 12/06/03 |
Keywords
- Diode lasers
- Fiber lasers
- Laser tuning
- Micromechanical devices
- Mirrors
- Optical fibers
- Optical tuning
- Packaging
- Silicon on insulator technology
- Tunable circuits and devices
ASJC Scopus subject areas
- Electrical and Electronic Engineering