Tunable electronic transport properties of DyScO₃/ SrTiO₃polar heterointerface

Electronic transport properties of DyScO3/ SrTiO3polar heterointerface grown at different oxygen pressures are studied. This DyScO3/ SrTiO3polar heterointerface exhibits much higher charge mobility, up to 104cm2V-1 s-1, compared to the LaAlO3/ SrTiO3system due to relatively lower lattice mismatch between the film and substrate. More significantly, the DyScO3film deposited under 10-4 mbar oxygen pressure presents an interfacial metal-to-semiconductor conducting mechanism transition at 90 K. Field effect transport measurement results reveal that this transition can be modulated by field effect through controlling the electron doping level of the interface originated from interfacial electronic reconstruction.