Transverse optical confinement in zinc silicate nanocrystalline layer

H. Y. Yang; S. F. Yu; Shu Ping Lau

Transverse optical confinement in zinc silicate nanocrystalline layer

H. Y. Yang, S. F. Yu, Shu Ping Lau

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

Transverse optical confinement in zinc oxide (ZnO) random cavities on Si substrate is achieved by a self-generated zinc silicate (Zn2SiO 4) layer formed between the interface of ZnO and Si after thermal annealing.

Original language	English
Title of host publication	Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010
Pages	534-535
Number of pages	2
Publication status	Published - 29 Nov 2010
Event	15th OptoElectronics and Communications Conference, OECC2010 - Sapporo, Japan Duration: 5 Jul 2010 → 9 Jul 2010

Conference

Conference	15th OptoElectronics and Communications Conference, OECC2010
Country/Territory	Japan
City	Sapporo
Period	5/07/10 → 9/07/10

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "Transverse optical confinement in zinc silicate nanocrystalline layer",

abstract = "Transverse optical confinement in zinc oxide (ZnO) random cavities on Si substrate is achieved by a self-generated zinc silicate (Zn2SiO 4) layer formed between the interface of ZnO and Si after thermal annealing.",

author = "Yang, {H. Y.} and Yu, {S. F.} and Lau, {Shu Ping}",

year = "2010",

month = nov,

day = "29",

language = "English",

isbn = "9784885522451",

pages = "534--535",

booktitle = "Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010",

note = "15th OptoElectronics and Communications Conference, OECC2010 ; Conference date: 05-07-2010 Through 09-07-2010",

}

TY - GEN

T1 - Transverse optical confinement in zinc silicate nanocrystalline layer

AU - Yang, H. Y.

AU - Yu, S. F.

AU - Lau, Shu Ping

PY - 2010/11/29

Y1 - 2010/11/29

N2 - Transverse optical confinement in zinc oxide (ZnO) random cavities on Si substrate is achieved by a self-generated zinc silicate (Zn2SiO 4) layer formed between the interface of ZnO and Si after thermal annealing.

AB - Transverse optical confinement in zinc oxide (ZnO) random cavities on Si substrate is achieved by a self-generated zinc silicate (Zn2SiO 4) layer formed between the interface of ZnO and Si after thermal annealing.

UR - http://www.scopus.com/inward/record.url?scp=78649237352&partnerID=8YFLogxK

M3 - Conference article published in proceeding or book

SN - 9784885522451

SP - 534

EP - 535

BT - Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010

T2 - 15th OptoElectronics and Communications Conference, OECC2010

Y2 - 5 July 2010 through 9 July 2010

ER -

Transverse optical confinement in zinc silicate nanocrystalline layer

Abstract

Conference

ASJC Scopus subject areas

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