Transparent Indium Tin Oxide Electrodes on Muscovite Mica for High-Temperature-Processed Flexible Optoelectronic Devices

Shanming Ke; Chang Chen; Nianqing Fu; Hua Zhou; Mao Ye; Peng Lin; Wenxiang Yuan; Xierong Zeng; Lang Chen; Haitao Huang

doi:10.1021/acsami.6b09166

Transparent Indium Tin Oxide Electrodes on Muscovite Mica for High-Temperature-Processed Flexible Optoelectronic Devices

Shanming Ke, Chang Chen, Nianqing Fu, Hua Zhou, Mao Ye, Peng Lin, Wenxiang Yuan, Xierong Zeng, Lang Chen, Haitao Huang

Research output: Journal article publication › Journal article › Academic research › peer-review

47 Citations (Scopus)

Abstract

Sn-doped In2O3(ITO) electrodes were deposited on transparent and flexible muscovite mica. The use of mica substrate makes a high-temperature annealing process (up to 500 °C) possible. ITO/mica retains its low electric resistivity even after continuous bending of 1000 times on account of the unique layered structure of mica. When used as a transparent flexible heater, ITO/mica shows an extremely fast ramping (<15 s) up to a high temperature of over 438 °C. When used as a transparent electrode, ITO/mica permits a high-temperature annealing (450 °C) approach to fabricate flexible perovskite solar cells (PSCs) with high efficiency.

Original language	English
Pages (from-to)	28406-28411
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	8
Issue number	42
DOIs	https://doi.org/10.1021/acsami.6b09166
Publication status	Published - 26 Oct 2016

Keywords

flexible electronics
flexible perovskite solar cells
high temperature process
mica
transparent heaters

ASJC Scopus subject areas

Materials Science(all)

More information

10.1021/acsami.6b09166

Scopus Link

Cite this

@article{ff19e5cf3ec64810866fc51853ac53d1,

title = "Transparent Indium Tin Oxide Electrodes on Muscovite Mica for High-Temperature-Processed Flexible Optoelectronic Devices",

abstract = "Sn-doped In2O3(ITO) electrodes were deposited on transparent and flexible muscovite mica. The use of mica substrate makes a high-temperature annealing process (up to 500 °C) possible. ITO/mica retains its low electric resistivity even after continuous bending of 1000 times on account of the unique layered structure of mica. When used as a transparent flexible heater, ITO/mica shows an extremely fast ramping (<15 s) up to a high temperature of over 438 °C. When used as a transparent electrode, ITO/mica permits a high-temperature annealing (450 °C) approach to fabricate flexible perovskite solar cells (PSCs) with high efficiency.",

keywords = "flexible electronics, flexible perovskite solar cells, high temperature process, mica, transparent heaters",

author = "Shanming Ke and Chang Chen and Nianqing Fu and Hua Zhou and Mao Ye and Peng Lin and Wenxiang Yuan and Xierong Zeng and Lang Chen and Haitao Huang",

year = "2016",

month = oct,

day = "26",

doi = "10.1021/acsami.6b09166",

language = "English",

volume = "8",

pages = "28406--28411",

journal = "ACS applied materials & interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "42",

}

Transparent Indium Tin Oxide Electrodes on Muscovite Mica for High-Temperature-Processed Flexible Optoelectronic Devices. / Ke, Shanming; Chen, Chang; Fu, Nianqing; Zhou, Hua; Ye, Mao; Lin, Peng; Yuan, Wenxiang; Zeng, Xierong; Chen, Lang; Huang, Haitao.

In: ACS Applied Materials and Interfaces, Vol. 8, No. 42, 26.10.2016, p. 28406-28411.

Research output: Journal article publication › Journal article › Academic research › peer-review

TY - JOUR

T1 - Transparent Indium Tin Oxide Electrodes on Muscovite Mica for High-Temperature-Processed Flexible Optoelectronic Devices

AU - Ke, Shanming

AU - Chen, Chang

AU - Fu, Nianqing

AU - Zhou, Hua

AU - Ye, Mao

AU - Lin, Peng

AU - Yuan, Wenxiang

AU - Zeng, Xierong

AU - Chen, Lang

AU - Huang, Haitao

PY - 2016/10/26

Y1 - 2016/10/26

N2 - Sn-doped In2O3(ITO) electrodes were deposited on transparent and flexible muscovite mica. The use of mica substrate makes a high-temperature annealing process (up to 500 °C) possible. ITO/mica retains its low electric resistivity even after continuous bending of 1000 times on account of the unique layered structure of mica. When used as a transparent flexible heater, ITO/mica shows an extremely fast ramping (<15 s) up to a high temperature of over 438 °C. When used as a transparent electrode, ITO/mica permits a high-temperature annealing (450 °C) approach to fabricate flexible perovskite solar cells (PSCs) with high efficiency.

AB - Sn-doped In2O3(ITO) electrodes were deposited on transparent and flexible muscovite mica. The use of mica substrate makes a high-temperature annealing process (up to 500 °C) possible. ITO/mica retains its low electric resistivity even after continuous bending of 1000 times on account of the unique layered structure of mica. When used as a transparent flexible heater, ITO/mica shows an extremely fast ramping (<15 s) up to a high temperature of over 438 °C. When used as a transparent electrode, ITO/mica permits a high-temperature annealing (450 °C) approach to fabricate flexible perovskite solar cells (PSCs) with high efficiency.

KW - flexible electronics

KW - flexible perovskite solar cells

KW - high temperature process

KW - mica

KW - transparent heaters

UR - http://www.scopus.com/inward/record.url?scp=84993953590&partnerID=8YFLogxK

U2 - 10.1021/acsami.6b09166

DO - 10.1021/acsami.6b09166

M3 - Journal article

VL - 8

SP - 28406

EP - 28411

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 42

ER -