Abstract
Sn-doped In2O3(ITO) electrodes were deposited on transparent and flexible muscovite mica. The use of mica substrate makes a high-temperature annealing process (up to 500 °C) possible. ITO/mica retains its low electric resistivity even after continuous bending of 1000 times on account of the unique layered structure of mica. When used as a transparent flexible heater, ITO/mica shows an extremely fast ramping (<15 s) up to a high temperature of over 438 °C. When used as a transparent electrode, ITO/mica permits a high-temperature annealing (450 °C) approach to fabricate flexible perovskite solar cells (PSCs) with high efficiency.
Original language | English |
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Pages (from-to) | 28406-28411 |
Number of pages | 6 |
Journal | ACS Applied Materials and Interfaces |
Volume | 8 |
Issue number | 42 |
DOIs | |
Publication status | Published - 26 Oct 2016 |
Keywords
- flexible electronics
- flexible perovskite solar cells
- high temperature process
- mica
- transparent heaters
ASJC Scopus subject areas
- General Materials Science