Transient sensitivity of sectorial split-drain magnetic field-effect transistor

Zhenyi Yang, Sik Lam Siu, Wing Shan Tam, Chi Wah Kok, Chi Wah Leung, P. T. Lai, Hei Wong, P. W.T. Pong

Research output: Journal article publicationJournal articleAcademic researchpeer-review

7 Citations (Scopus)

Abstract

This paper proposed an analytical model on the geometric dependence of the transient sensitivity and transient sensing hysteresis of sectorial split-drain magnetic field-effect transistors (SD-MAGFETs). We also conjectured that the transient sensing hysteresis is caused by the charge trapped on channel boundary, and is also geometric dependent. Experimental results are presented which show good consistence with the analytical derivation. The derived analytical model and experimental results can be used as a design guideline for the optimization and trade-off of the transient sensitivity and transient sensing hysteresis of the sectorial SD-MAGFETs.
Original languageEnglish
Article number6559182
Pages (from-to)4048-4051
Number of pages4
JournalIEEE Transactions on Magnetics
Volume49
Issue number7
DOIs
Publication statusPublished - 2 Aug 2013

Keywords

  • Hysteresis
  • magnetic field-effect transistor (MAGFET)
  • sectorial
  • sensitivity
  • split-drain
  • transient sensitivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this