Abstract
The copper interconnects cannot keep pace with the IC interconnect requirements as the feature size continues to scale down to nanoscale. Theoretical works predicted that carbon nanotube (CNT) is more superior than copper for future VLSI interconnects in terms of electrical conductivity, thermal management and reliability. Technology breakthroughs are required to bridge the gaps between the theoretical predictions and what is achievable with current CNT technology. In this paper, we shall describe our experimental efforts on the controlled growth of aligned CNTs; the integrations of CNT interconnects with IC technology; and the electrical characterization of the CNT interconnect. We also present the electro-migration test result of CNT-based interconnects to demonstrate the potential of CNT as robust VLSI interconnects. We hope our works provide useful data on the potential of CNT for VLSI interconnect applications.
Original language | English |
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Title of host publication | 2011 IEEE/IFIP 19th International Conference on VLSI and System-on-Chip, VLSI-SoC 2011 |
Pages | 248-253 |
Number of pages | 6 |
DOIs | |
Publication status | Published - 22 Dec 2011 |
Event | 2011 IEEE/IFIP 19th International Conference on VLSI and System-on-Chip, VLSI-SoC 2011 - Kowloon, Hong Kong Duration: 3 Oct 2011 → 5 Oct 2011 |
Conference
Conference | 2011 IEEE/IFIP 19th International Conference on VLSI and System-on-Chip, VLSI-SoC 2011 |
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Country/Territory | Hong Kong |
City | Kowloon |
Period | 3/10/11 → 5/10/11 |
Keywords
- breakdown
- carbon nanotube (CNT)
- chemical vapor deposition (CVD)
- contact resistance
- copper (Cu)
- electro-migration (EM)
- interconnect
- interface
- reliability
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering