Towards future VLSI interconnects using aligned carbon nanotubes

Yang Chai, Minghui Sun, Zhiyong Xiao, Yuan Li, Min Zhang, Philip Ching Ho Chan

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

5 Citations (Scopus)

Abstract

The copper interconnects cannot keep pace with the IC interconnect requirements as the feature size continues to scale down to nanoscale. Theoretical works predicted that carbon nanotube (CNT) is more superior than copper for future VLSI interconnects in terms of electrical conductivity, thermal management and reliability. Technology breakthroughs are required to bridge the gaps between the theoretical predictions and what is achievable with current CNT technology. In this paper, we shall describe our experimental efforts on the controlled growth of aligned CNTs; the integrations of CNT interconnects with IC technology; and the electrical characterization of the CNT interconnect. We also present the electro-migration test result of CNT-based interconnects to demonstrate the potential of CNT as robust VLSI interconnects. We hope our works provide useful data on the potential of CNT for VLSI interconnect applications.
Original languageEnglish
Title of host publication2011 IEEE/IFIP 19th International Conference on VLSI and System-on-Chip, VLSI-SoC 2011
Pages248-253
Number of pages6
DOIs
Publication statusPublished - 22 Dec 2011
Event2011 IEEE/IFIP 19th International Conference on VLSI and System-on-Chip, VLSI-SoC 2011 - Kowloon, Hong Kong
Duration: 3 Oct 20115 Oct 2011

Conference

Conference2011 IEEE/IFIP 19th International Conference on VLSI and System-on-Chip, VLSI-SoC 2011
CountryHong Kong
CityKowloon
Period3/10/115/10/11

Keywords

  • breakdown
  • carbon nanotube (CNT)
  • chemical vapor deposition (CVD)
  • contact resistance
  • copper (Cu)
  • electro-migration (EM)
  • interconnect
  • interface
  • reliability

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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