Towards 1-nm-node electronics with two-dimensional transistors

Wei Zeng; Su Ting Han; Ye Zhou

doi:10.1038/s41928-025-01501-3

Towards 1-nm-node electronics with two-dimensional transistors

Wei Zeng
, Su Ting Han
, Ye Zhou

The Hong Kong Polytechnic University

Research output: Journal article publication › Comment/debate/erratum

Abstract

Two papers report molybdenum disulfide transistors with highly scaled channel and contact lengths, which is achieved through multilayer channel optimization in one case and molecular beam epitaxy deposition of single-crystal antimony contacts in the other.

Original language	English
Pages (from-to)	1138-1139
Number of pages	2
Journal	Nature Electronics
Volume	8
Issue number	12
DOIs	https://doi.org/10.1038/s41928-025-01501-3
Publication status	Published - 17 Dec 2025

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Electrical and Electronic Engineering

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10.1038/s41928-025-01501-3

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title = "Towards 1-nm-node electronics with two-dimensional transistors",

abstract = "Two papers report molybdenum disulfide transistors with highly scaled channel and contact lengths, which is achieved through multilayer channel optimization in one case and molecular beam epitaxy deposition of single-crystal antimony contacts in the other.",

author = "Wei Zeng and Han, \{Su Ting\} and Ye Zhou",

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T1 - Towards 1-nm-node electronics with two-dimensional transistors

AU - Zeng, Wei

AU - Han, Su Ting

AU - Zhou, Ye

PY - 2025/12/17

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N2 - Two papers report molybdenum disulfide transistors with highly scaled channel and contact lengths, which is achieved through multilayer channel optimization in one case and molecular beam epitaxy deposition of single-crystal antimony contacts in the other.

AB - Two papers report molybdenum disulfide transistors with highly scaled channel and contact lengths, which is achieved through multilayer channel optimization in one case and molecular beam epitaxy deposition of single-crystal antimony contacts in the other.

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U2 - 10.1038/s41928-025-01501-3

DO - 10.1038/s41928-025-01501-3

M3 - Comment/debate/erratum

AN - SCOPUS:105025125405

SN - 2520-1131

VL - 8

SP - 1138

EP - 1139

JO - Nature Electronics

JF - Nature Electronics

IS - 12

ER -

Towards 1-nm-node electronics with two-dimensional transistors

Abstract

ASJC Scopus subject areas

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