Toward High-mobility and Low-power 2D MoS 2 Field-effect Transistors

Zhihao Yu, Ying Zhu, Weisheng Li, Yi Shi, Gang Zhang, Yang Chai, Xinran Wang

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

1 Citation (Scopus)

Abstract

2D semiconductors are promising candidates for future electronic device applications due to their immunity to short-channel effects (SCE), but many issues regarding mobility, contact, interface and power consumption still remain (Fig. 1). We develop a low-field model to calculate the mobility of monolayer MoS 2 FETs. Guided by the model, high carrier mobility of 150 cm 2 /Vs and saturation current over 450 μ Aμm are realized in long-channel monolayer MoS 2 FETs, through a series of interface optimization by high- κ dielectric and thiol chemical treatment. For low-power applications, we demonstrate hysteresis-free MoS 2 negative capacitance FETs (NCFETs) using ferroelectric HtZrO x (HZO) as gate dielectric, achieving sub-60m V/dec subthreshold slope (SS) over 6 orders of I D , minimum SS of 24 mV/dec and 10 7 on/off ratio under V dd=0.5 V. We further study the high frequency performance and show that sub-60mV/dec is maintained at least to 10 kHz without signs of degradation. Finally, by performing different gate sweeps we conclude that the steep slope is indeed due to NC effects rather than ferroelectric switching of HZO.

Original languageEnglish
Title of host publication2018 IEEE International Electron Devices Meeting, IEDM 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages22.4.1-22.4.4
ISBN (Electronic)9781728119878
DOIs
Publication statusPublished - 16 Jan 2019
Event64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
Duration: 1 Dec 20185 Dec 2018

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2018-December
ISSN (Print)0163-1918

Conference

Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
CountryUnited States
CitySan Francisco
Period1/12/185/12/18

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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