Topological phase change transistors based on tellurium Weyl semiconductor

Jiewei Chen, Ting Zhang, Jingli Wang, Lin Xu, Ziyuan Lin, Jidong Liu, Cong Wang, Ning Zhang, Shu Ping Lau, Wenjing Zhang, Manish Chhowalla, Yang Chai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

20 Citations (Scopus)

Abstract

Modern electronics demand transistors with extremely high performance and energy efficiency. Charge-based transistors with conventional semiconductors experience substantial heat dissipation because of carrier scattering. Here, we demonstrate low-loss topological phase change transistors (TPCTs) based on tellurium, a Weyl semiconductor. By modulating the energy separation between the Fermi level and the Weyl point of tellurium through electrostatic gate modulation, the device exhibits topological phase change between Weyl (Chern number ≠ 0) and conventional (Chern number = 0) semiconductors. In the Weyl ON state, the device has low-loss transport characteristics due to the global topology of gauge fields against external perturbations; the OFF state exhibits trivial charge transport in the conventional phase by moving the Fermi level into the bandgap. The TPCTs show a high ON/OFF ratio (108) at low operation voltage (≤2 volts) and high ON-state conductance (39 mS/μm). Our studies provide alternative strategies for realizing ultralow power electronics.

Original languageEnglish
Article numbereabn3837
JournalScience advances
Volume8
Issue number23
DOIs
Publication statusPublished - Jun 2022

ASJC Scopus subject areas

  • General

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