@article{b52000f14d4f434b98466452eb88e6ca,
title = "Tin telluride quantum dots as a new saturable absorber for a mode-locked Yb+ doped fiber laser",
abstract = "Tin telluride (SnTe), a member of group IV-VI semiconductors, has attracted significant attention due to its super thermoelectricity and ferroelectricity. In addition, SnTe was reported to have a direct bandgap (0.18 eV) and relatively good oxidation resistance, therefore, it has huge application potential in optoelectronics. However, up to now, the study of interaction between light and SnTe is still immature. In this paper, SnTe quantum dots (QDs) were prepared by the ultrasonication assisted liquid-phase exfoliation (UALPE) method and the broadband absorption properties of SnTe QDs were demonstrated. Furthermore, by employing SnTe QDs as a saturable absorber (SA), a stable mode-locked Yb-doped fiber laser (YDFL) with a pulse duration of 265 ps and an output power of 5.68 mW was obtained. Our results demonstrated that SnTe could be a promising candidate in the mode-locked YDFL system and photonic technology application.",
keywords = "2D materials, Quantum dots, SnTe, Yb mode-locked fiber laser",
author = "Junpeng Qiao and Safayet Ahmed and Cheng, {Ping Kwong} and Zeng, {Long Hui} and Jia Zhao and Tsang, {Yuen Hong}",
note = "Funding Information: J. Qiao and S. Ahmed contributed equally to this work. The authors acknowledge the Research Grants Council of Hong Kong, China (Project number: 152093/18E); the Hong Kong Scholars Program (XJ2019020); the Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China (Grant Code: the science and technology innovation commission of Shenzhen (JCY20180306173805740)); N.B. acknowledges the financial support by the UCONN{\textquoteright}s Office of the Vice President for Research (OVPR) through the Research Excellence Program (REP). Funding Information: J. Qiao and S. Ahmed contributed equally to this work. The authors acknowledge the Research Grants Council of Hong Kong, China (Project number: 152093/18E); the Hong Kong Scholars Program (XJ2019020); the Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China (Grant Code: the science and technology innovation commission of Shenzhen (JCY20180306173805740)); N.B. acknowledges the financial support by the UCONN's Office of the Vice President for Research (OVPR) through the Research Excellence Program (REP). Publisher Copyright: {\textcopyright} 2021 Elsevier Ltd",
year = "2021",
month = oct,
doi = "10.1016/j.optlastec.2021.107258",
language = "English",
volume = "142",
journal = "Optics and Laser Technology",
issn = "0030-3992",
publisher = "Elsevier Ltd",
}