Tight-binding modeling of excitonic response in van der Waals stacked 2D semiconductors

Keyphrases

• Van Der Waals 100%
• 2D Semiconductors 100%
• Transition Metal Dichalcogenides 100%
• Tight-binding Model 100%
• Excitonic 100%
• Excited States 66%
• DFT Calculations 66%
• Layer-dependent 66%
• Multilayer Structure 33%
• Banded Structure 33%
• Optical Measurement 33%
• Structure-property Relationships 33%
• Elevated Temperature 33%
• Temperature Effect 33%
• Optoelectronic Properties 33%
• Layered Structure 33%
• Lattice Mismatch 33%
• Effective Model 33%
• Intensity Variation 33%
• Exciton Emission 33%
• Emission Intensity 33%
• Non-radial 33%
• Explicit Model 33%
• Emission Energy 33%
• Exciton 33%
• Direct Excitation 33%
• Radiative Damping 33%
• Excitonic Properties 33%
• Interlayer Exciton 33%
• Indirect Excitons 33%
• Electron-phonon Interaction 33%
• Atomically Thin Transition Metal Dichalcogenides 33%
• Monolayer WS2 33%
• Varshni Equation 33%
• Nanoscale Optoelectronics 33%

Physics

• Transition Metal Dichalcogenide 100%
• Exciton 100%
• DFT Calculations 50%
• Optoelectronics 50%
• Nanoscale 25%
• Laminate 25%
• Optical Measurement 25%
• Electron Phonon Interactions 25%
• Stacking 25%
• Temperature Dependence 25%
• Lattice Mismatch 25%

Material Science

• Transition Metal Dichalcogenides 100%
• Monolayers 25%
• Lattice Mismatch 25%
• Optical Measurement 25%
• Laminate 25%