The threshold voltage, Vth of fully depleted silicon-on-insulator (FDSOI) MOSFET with effective channel lengths down to the deep-submicrometer range has been investigated. We use a simple quasi-two-dimensional model to describe the Vth roll-off and drain voltage dependence. The shift in threshold voltage has a similar trend as in bulk. However, threshold voltage roll-off in FDSOI is less than bulk for the same effective channel length as predicted by a shorter characteristic length / in FDSOI. Furthermore, δth is independent of back-gate bias in FDSOI MOSFET. Experimental data shows that the model predictions are in good agreement. The proposed model retains accuracy because it does not assume apriori charge partitioning or constant surface potential. Also it is simple in functional form and hence computationally efficient. Using our model, Vth design space for Deep-Submicrometer FDSOI MOSFET is obtained. Excellent correlation between model predicted Vth design space and previously reported two-dimensional numerical simulations using MINIMOS5  is obtained.
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy (miscellaneous)